JPS6439059A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6439059A JPS6439059A JP62097762A JP9776287A JPS6439059A JP S6439059 A JPS6439059 A JP S6439059A JP 62097762 A JP62097762 A JP 62097762A JP 9776287 A JP9776287 A JP 9776287A JP S6439059 A JPS6439059 A JP S6439059A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- base
- lead
- deposited
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- 229910021339 platinum silicide Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910001092 metal group alloy Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To decrease the resistance values of electrodes and to implement a high speed in circuit operation, by forming a metal layer or a metal alloy layer on the surface of at least lower electrodes other than the overlapped part of the lower electrodes and an upper electrode, which comprise a semiconductor material. CONSTITUTION:Platinum is deposited on a silicon substrate 101, which include base and emitter lead-out electrodes 106 and 107. Thereafter, heat treatment is performed. A platinum silicide layer 111 is formed on the surfaces of the base and emitter lead-out electrodes 106 and 107. Then, a silicon oxide film 109 is deposited on the entire surface. A hole is provided in said film. An aluminum electrode 110 is formed. Therefore, the most part of the base lead-out electrode 106, which is connected to an outer base 103, is covered with the low resistance platinum silicide layer 111. Thus the resistances of the lead-out electrodes can be made low, and the speed of the circuit operation can be made fast.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62097762A JPS6439059A (en) | 1987-04-20 | 1987-04-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62097762A JPS6439059A (en) | 1987-04-20 | 1987-04-20 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6439059A true JPS6439059A (en) | 1989-02-09 |
Family
ID=14200880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62097762A Pending JPS6439059A (en) | 1987-04-20 | 1987-04-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6439059A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02203526A (en) * | 1989-02-01 | 1990-08-13 | Sony Corp | Semiconductor device |
| JPH0462838A (en) * | 1990-06-25 | 1992-02-27 | Matsushita Electron Corp | Semiconductor device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55103740A (en) * | 1979-01-31 | 1980-08-08 | Nec Corp | Semiconductor device |
| JPS5974622A (en) * | 1982-10-22 | 1984-04-27 | Hitachi Ltd | Electrode of semiconductor device and manufacture thereof |
| JPS6066450A (en) * | 1983-09-21 | 1985-04-16 | Seiko Epson Corp | multilayer wiring |
| JPS61203653A (en) * | 1985-03-06 | 1986-09-09 | Nec Corp | Connection of wiring |
| JPS625657A (en) * | 1985-07-01 | 1987-01-12 | Nec Corp | Semiconductor integrated circuit device |
| JPS62117368A (en) * | 1985-11-15 | 1987-05-28 | Mitsubishi Electric Corp | Semiconductor device |
-
1987
- 1987-04-20 JP JP62097762A patent/JPS6439059A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55103740A (en) * | 1979-01-31 | 1980-08-08 | Nec Corp | Semiconductor device |
| JPS5974622A (en) * | 1982-10-22 | 1984-04-27 | Hitachi Ltd | Electrode of semiconductor device and manufacture thereof |
| JPS6066450A (en) * | 1983-09-21 | 1985-04-16 | Seiko Epson Corp | multilayer wiring |
| JPS61203653A (en) * | 1985-03-06 | 1986-09-09 | Nec Corp | Connection of wiring |
| JPS625657A (en) * | 1985-07-01 | 1987-01-12 | Nec Corp | Semiconductor integrated circuit device |
| JPS62117368A (en) * | 1985-11-15 | 1987-05-28 | Mitsubishi Electric Corp | Semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02203526A (en) * | 1989-02-01 | 1990-08-13 | Sony Corp | Semiconductor device |
| JPH0462838A (en) * | 1990-06-25 | 1992-02-27 | Matsushita Electron Corp | Semiconductor device |
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