JPS55121994A - Preparing semiconductor single crystal - Google Patents
Preparing semiconductor single crystalInfo
- Publication number
- JPS55121994A JPS55121994A JP2552479A JP2552479A JPS55121994A JP S55121994 A JPS55121994 A JP S55121994A JP 2552479 A JP2552479 A JP 2552479A JP 2552479 A JP2552479 A JP 2552479A JP S55121994 A JPS55121994 A JP S55121994A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- impurity
- concentration
- crystal
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title abstract 10
- 239000004065 semiconductor Substances 0.000 title 1
- 239000007789 gas Substances 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 230000000630 rising effect Effects 0.000 abstract 2
- 239000002912 waste gas Substances 0.000 abstract 2
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 238000005204 segregation Methods 0.000 abstract 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To provide single crystal having uniform impurity concentration, by controlling the quantity of impurity in single crystal on the basis of doping gas concentration in waste gas in producing single crystal.
CONSTITUTION: Argon gas and doping gas are supplied into a pulling oven 3 and polycrystalline silicon in crucible 2 is melted. Seed crystal 10 is placed in the molten Si 1 and, while rotating, the seed crystal 10 is gradually raised so that single crystal 11 is grown on the bottom face of the seed crystal. Concentration C1 of dopant (P) in waste gas is continuously measured by a flame spectrophotometer 8, and the measured value C1 is compared with basic value C stored in computer 9 to provide the difference value ΔC. Doping gas flow rate is adjusted by having a regulation valve 7 control the difference value ΔC to make zero. Sequentially rising single crystal is controlled to have effective segregation coefficient of impurity approach to unity. As a result, impurity concentration and resistivity is made uniform in the direction in which single crystal is rising.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2552479A JPS55121994A (en) | 1979-03-07 | 1979-03-07 | Preparing semiconductor single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2552479A JPS55121994A (en) | 1979-03-07 | 1979-03-07 | Preparing semiconductor single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55121994A true JPS55121994A (en) | 1980-09-19 |
Family
ID=12168435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2552479A Pending JPS55121994A (en) | 1979-03-07 | 1979-03-07 | Preparing semiconductor single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55121994A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59190292A (en) * | 1983-04-08 | 1984-10-29 | Shin Etsu Handotai Co Ltd | Method for controlling resistivity of semiconductor silicon single crystal |
| DE112018001046B4 (en) | 2017-02-28 | 2022-05-19 | Sumco Corporation | Method of manufacturing a silicon single crystal ingot and silicon single crystal growth device |
-
1979
- 1979-03-07 JP JP2552479A patent/JPS55121994A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59190292A (en) * | 1983-04-08 | 1984-10-29 | Shin Etsu Handotai Co Ltd | Method for controlling resistivity of semiconductor silicon single crystal |
| DE112018001046B4 (en) | 2017-02-28 | 2022-05-19 | Sumco Corporation | Method of manufacturing a silicon single crystal ingot and silicon single crystal growth device |
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