JPS5771894A - Preparation of single crystal of semiconductor - Google Patents
Preparation of single crystal of semiconductorInfo
- Publication number
- JPS5771894A JPS5771894A JP55144664A JP14466480A JPS5771894A JP S5771894 A JPS5771894 A JP S5771894A JP 55144664 A JP55144664 A JP 55144664A JP 14466480 A JP14466480 A JP 14466480A JP S5771894 A JPS5771894 A JP S5771894A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- single crystal
- melt
- crucible
- wall face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To prepare a single crystal of silicon semiconductor containing uniformly a given concentraction of oxygen, by carrying out growth of single srystal by CZ method using a quartz crucible wherein a film not dissolving in a silicon polycrystalline melt is formed at the upper part of the inner wall face.
CONSTITUTION: The quartz crucible 11 having a film (e.g., Si3N4) 12 not dissolving in a silicon polycrystalline melt at the upper part of the inner wall face is used. Siicon polycrystal together with active impurity for control is put int the cruicble 11 and metled, the seed crystal 14 of silicon single crystal is immersed in this melt 13, and the seed crystal is gradually pulled up while being rotated, to form the silicon single crystal 15. In this method, in spite of the change of the liquid level of the silicon melt 13 caused by pulling up, the contact area between the exposed face of the crucible 11 and the silicon melt 13 is not changed, so that the amount of oxygen eluted from the cruicible 11 is always constant. The oxygen concentration contained in the silicon single crystal 15 can be controlled by changing the area of the Si3N4 film formed in the inner wall face of the crucible 11.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55144664A JPS5771894A (en) | 1980-10-16 | 1980-10-16 | Preparation of single crystal of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55144664A JPS5771894A (en) | 1980-10-16 | 1980-10-16 | Preparation of single crystal of semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5771894A true JPS5771894A (en) | 1982-05-04 |
Family
ID=15367349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55144664A Pending JPS5771894A (en) | 1980-10-16 | 1980-10-16 | Preparation of single crystal of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5771894A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5935094A (en) * | 1982-08-20 | 1984-02-25 | Toshiba Ceramics Co Ltd | Method and apparatus for preparation of silicon single crystal |
| KR20230175318A (en) * | 2021-09-30 | 2023-12-29 | 시안 이에스윈 머티리얼즈 테크놀로지 컴퍼니 리미티드 | Quartz crucible and crystal pulling furnace |
-
1980
- 1980-10-16 JP JP55144664A patent/JPS5771894A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5935094A (en) * | 1982-08-20 | 1984-02-25 | Toshiba Ceramics Co Ltd | Method and apparatus for preparation of silicon single crystal |
| KR20230175318A (en) * | 2021-09-30 | 2023-12-29 | 시안 이에스윈 머티리얼즈 테크놀로지 컴퍼니 리미티드 | Quartz crucible and crystal pulling furnace |
| JP2024520845A (en) * | 2021-09-30 | 2024-05-24 | 西安奕斯偉材料科技股▲ふん▼有限公司 | Quartz crucible and crystal pulling furnace |
| US12227871B2 (en) | 2021-09-30 | 2025-02-18 | Xi'an ESWIN Material Technology Co., Ltd. | Quartz crucible and crystal puller |
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