JPS55123143A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55123143A
JPS55123143A JP3023479A JP3023479A JPS55123143A JP S55123143 A JPS55123143 A JP S55123143A JP 3023479 A JP3023479 A JP 3023479A JP 3023479 A JP3023479 A JP 3023479A JP S55123143 A JPS55123143 A JP S55123143A
Authority
JP
Japan
Prior art keywords
film
layer
poly
single crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3023479A
Other languages
Japanese (ja)
Inventor
Kunio Aomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3023479A priority Critical patent/JPS55123143A/en
Publication of JPS55123143A publication Critical patent/JPS55123143A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To obtain a miniaturized and of high density impurity-added layer by growing a semiconductor layer selectively in a grooved pattern surrounded by an insulating film on the surface of a semiconductor. CONSTITUTION:An Si3N4 film 12 is formed selectively on an Si substrate 11, and Si layes 13, 14 of single crystal and poly-crystal are grown on each of them. The poly-Si 14 is removed to expose the Si3N4 film 12, which is coated with an SiO2 film 15. Next, the Si3N4 film 12 is removed with the SiO2 film 15 as a mask. Then, an Si layer 16 of single crystal or poly-crystal is formed on the exposed substrate 11, and its height is adjusted so as to be almost same as the single crystal layer 13. From adding an impurity to the Si layer 16 with the SiO2 film 15 as a mask, it can be diffused deeply as necessary without expanding circumferentially, thus forming a miniaturized domain of high density.
JP3023479A 1979-03-15 1979-03-15 Manufacture of semiconductor device Pending JPS55123143A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3023479A JPS55123143A (en) 1979-03-15 1979-03-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3023479A JPS55123143A (en) 1979-03-15 1979-03-15 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55123143A true JPS55123143A (en) 1980-09-22

Family

ID=12298016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3023479A Pending JPS55123143A (en) 1979-03-15 1979-03-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55123143A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61284934A (en) * 1985-06-10 1986-12-15 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device having element separating insulating layer
US4758531A (en) * 1987-10-23 1988-07-19 International Business Machines Corporation Method of making defect free silicon islands using SEG

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61284934A (en) * 1985-06-10 1986-12-15 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device having element separating insulating layer
US4758531A (en) * 1987-10-23 1988-07-19 International Business Machines Corporation Method of making defect free silicon islands using SEG

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