JPS55123182A - Light emitting diode - Google Patents

Light emitting diode

Info

Publication number
JPS55123182A
JPS55123182A JP3135379A JP3135379A JPS55123182A JP S55123182 A JPS55123182 A JP S55123182A JP 3135379 A JP3135379 A JP 3135379A JP 3135379 A JP3135379 A JP 3135379A JP S55123182 A JPS55123182 A JP S55123182A
Authority
JP
Japan
Prior art keywords
electrode
terminal
divided
electrodes
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3135379A
Other languages
Japanese (ja)
Inventor
Hideo Kuwabara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3135379A priority Critical patent/JPS55123182A/en
Publication of JPS55123182A publication Critical patent/JPS55123182A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Led Devices (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

PURPOSE:To suppress higher harmonic disturbance completely by the method wherein, of the front and back electrodes constituting a LED, the electrode on the front side is divided into two with a light-transmitting window as the center, a phase shifter is connected in parallel between the two divided electrodes, and one end of an electrode is connected to a bias impressing terminal. CONSTITUTION:On the front surface of semiconductor substrate 1 of GaAs, or GaAlAs, on which a pn-junction has been formed, No.1 electrodes 2a are provided sandwiching light-transmitting window 5 formed in the center so as to expose substrate 1, and on the back is fitted No.2 electrode 3, and thereby photodiode 11 is constructed. In this structure No.1 electrode 2a is not made into a single sheet form, but it is divided into two sandwiching window 5. Phase shifter 7 is inserted between these divided electrodes in parallel. subsequently, one terminal of electrode 2a is connected to bias impressing terminal A3. A terminal of electrode 3 is also connected to other terminal B. an optical fiber is placed on window 5. In this way, LED, which becomes the light source for the light communication system, is constructed. By this, no higher hamonic wave component appears in LED.
JP3135379A 1979-03-16 1979-03-16 Light emitting diode Pending JPS55123182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3135379A JPS55123182A (en) 1979-03-16 1979-03-16 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3135379A JPS55123182A (en) 1979-03-16 1979-03-16 Light emitting diode

Publications (1)

Publication Number Publication Date
JPS55123182A true JPS55123182A (en) 1980-09-22

Family

ID=12328858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3135379A Pending JPS55123182A (en) 1979-03-16 1979-03-16 Light emitting diode

Country Status (1)

Country Link
JP (1) JPS55123182A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007071171A1 (en) * 2005-12-23 2007-06-28 Hongkong Applied Science And Technology Research Institute Co., Ltd. Light emitting device
US7659546B2 (en) * 2005-12-23 2010-02-09 Hong Kong Applied Science And Technology Research Institute Co., Ltd. Light emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007071171A1 (en) * 2005-12-23 2007-06-28 Hongkong Applied Science And Technology Research Institute Co., Ltd. Light emitting device
US7474287B2 (en) 2005-12-23 2009-01-06 Hong Kong Applied Science And Technology Light emitting device
US7659546B2 (en) * 2005-12-23 2010-02-09 Hong Kong Applied Science And Technology Research Institute Co., Ltd. Light emitting device

Similar Documents

Publication Publication Date Title
JPS53140048A (en) Light receiving element
JPS55123182A (en) Light emitting diode
JPS5598880A (en) Light transmitting/receiving semiconductor device
JPS5333080A (en) Light emitting semiconductor device and its production
JPS5384586A (en) Optical integrated circuit
JPS5380988A (en) Light emitting diode
JPS5329685A (en) Photo semiconductor device
JPS5249787A (en) Semiconductor light coupling device
JPS5329003A (en) Optical fiber trans mission system
JPS574180A (en) Light-emitting element in gallium nitride
JPS57124489A (en) Two wavelength semiconductor light emitting element
JPS57190373A (en) Light emitting element with photodetector
JPS5673485A (en) Semiconductor luminous element
JPS533784A (en) Light emitting diode for optical fibers and its production
JPS5433748A (en) Optical integrated circuit of semiconductor
JPS57183076A (en) Field control type optical semiconductor device
JPS561583A (en) Photocoupling structure
JPS5680178A (en) Gaas solar cell
JPS5646573A (en) Semiconductor optical device for optical fiber
JPS5779683A (en) Narrow spectrum type light emitting diode
JPS57197881A (en) Light emitting and receiving element
JPS5395656A (en) Production of high molecular light circuit
JPS5433684A (en) Photo semiconductor composite circuit
JPS572590A (en) Inp-ingaasp semiconductor light emitting device and manufacture thereof
JPS57193080A (en) Plane light emission type high intensity light emitting diode