JPS574180A - Light-emitting element in gallium nitride - Google Patents
Light-emitting element in gallium nitrideInfo
- Publication number
- JPS574180A JPS574180A JP7752680A JP7752680A JPS574180A JP S574180 A JPS574180 A JP S574180A JP 7752680 A JP7752680 A JP 7752680A JP 7752680 A JP7752680 A JP 7752680A JP S574180 A JPS574180 A JP S574180A
- Authority
- JP
- Japan
- Prior art keywords
- light
- gallium nitride
- substrate
- emitted
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE:To emit large optical output in one direction by mounting the light- emitting element in gallium nitride covered with a film opaque to luminescence on the surface at the substrate side. CONSTITUTION:When positive voltage is applied to a lead 5 and negative voltage to a lead 6, luminsecence is generated in a region in a thin-film 2 in gallium nitride contacting with a light-emitting electrode 3, and the light 8 is emitted through the transpacent sapphire substrate 1. Since the surface 1' of the substrate 1 is covered with the opaque film 10 here, the light generated in the light-emitting region is not emitted from the substrate 1' side, and the light 8 is emitted from a side surface 11, an area thereof is by far small. Accordingly, optical input to an optical fiber can be made extremely larger than normal elements when the optical fiber is bonded to one side surface of the element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7752680A JPS574180A (en) | 1980-06-09 | 1980-06-09 | Light-emitting element in gallium nitride |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7752680A JPS574180A (en) | 1980-06-09 | 1980-06-09 | Light-emitting element in gallium nitride |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS574180A true JPS574180A (en) | 1982-01-09 |
Family
ID=13636411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7752680A Pending JPS574180A (en) | 1980-06-09 | 1980-06-09 | Light-emitting element in gallium nitride |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS574180A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05129658A (en) * | 1991-10-30 | 1993-05-25 | Toyoda Gosei Co Ltd | Gallium nitride compound semiconductor light emission device |
| JPH08316529A (en) * | 1996-05-16 | 1996-11-29 | Toyoda Gosei Co Ltd | Gallium nitride compound semiconductor light emitting device |
| WO2004112154A1 (en) * | 2003-06-13 | 2004-12-23 | Rohm Co., Ltd. | Process for producing light-emitting diode element emitting white light |
| US6894317B2 (en) | 2001-06-11 | 2005-05-17 | Toyoda Gosei Co., Ltd. | Semiconductor element and method for producing the same |
| JP2005159035A (en) * | 2003-11-26 | 2005-06-16 | Sumitomo Electric Ind Ltd | Light emitting diode and light emitting device |
-
1980
- 1980-06-09 JP JP7752680A patent/JPS574180A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05129658A (en) * | 1991-10-30 | 1993-05-25 | Toyoda Gosei Co Ltd | Gallium nitride compound semiconductor light emission device |
| JPH08316529A (en) * | 1996-05-16 | 1996-11-29 | Toyoda Gosei Co Ltd | Gallium nitride compound semiconductor light emitting device |
| US6894317B2 (en) | 2001-06-11 | 2005-05-17 | Toyoda Gosei Co., Ltd. | Semiconductor element and method for producing the same |
| WO2004112154A1 (en) * | 2003-06-13 | 2004-12-23 | Rohm Co., Ltd. | Process for producing light-emitting diode element emitting white light |
| CN100411203C (en) * | 2003-06-13 | 2008-08-13 | 罗姆股份有限公司 | Method for manufacturing white-emitting light-emitting diode elements |
| US7759145B2 (en) | 2003-06-13 | 2010-07-20 | Rohm Co., Ltd. | Process for producing light-emitting diode element emitting white light |
| JP2005159035A (en) * | 2003-11-26 | 2005-06-16 | Sumitomo Electric Ind Ltd | Light emitting diode and light emitting device |
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