JPS55124258A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55124258A
JPS55124258A JP3196679A JP3196679A JPS55124258A JP S55124258 A JPS55124258 A JP S55124258A JP 3196679 A JP3196679 A JP 3196679A JP 3196679 A JP3196679 A JP 3196679A JP S55124258 A JPS55124258 A JP S55124258A
Authority
JP
Japan
Prior art keywords
fan
semiconductor device
transistor
collector
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3196679A
Other languages
Japanese (ja)
Inventor
Sadayuki Hamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3196679A priority Critical patent/JPS55124258A/en
Publication of JPS55124258A publication Critical patent/JPS55124258A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To enhance the reliability of a semiconductor device such as I<2>L having a plurality of reverse operation type longitudianl transistors by altering the collector areas of the longitudinal transistors in response to the fan-out to prevent the decrease of the current amplification factor and increase the yield of the semiconductor device. CONSTITUTION:An injector region 12 is formed in a semiconductor layer 17 becoming the emitter of a longitudinal transistor, a plurality of base regions 16A, 16B, 16C are formed oppositely thereto between the isolating regions 13, and collectors 14A, 14B, 14C are formed in the respective base regions to form an I<2>L having, for example, three reverse operation type longitudinal transistors. The area of the collector 14C of the transistor having the largest fan-out is increased at maximum, while the area of the collector 14A of the transistor having the smallest fan-out is decreased at minimum. Thus, even if the fan-out is incresed, it cannot lower the current amplification factor of the semiconductor device.
JP3196679A 1979-03-19 1979-03-19 Semiconductor device Pending JPS55124258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3196679A JPS55124258A (en) 1979-03-19 1979-03-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3196679A JPS55124258A (en) 1979-03-19 1979-03-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55124258A true JPS55124258A (en) 1980-09-25

Family

ID=12345687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3196679A Pending JPS55124258A (en) 1979-03-19 1979-03-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55124258A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5017997A (en) * 1987-03-24 1991-05-21 U.S. Philips Corp. Integrated circuit with high output current I2 L transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5017997A (en) * 1987-03-24 1991-05-21 U.S. Philips Corp. Integrated circuit with high output current I2 L transistor

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