JPS5261976A - Semiconductor integrated circuit device and its production - Google Patents

Semiconductor integrated circuit device and its production

Info

Publication number
JPS5261976A
JPS5261976A JP50139048A JP13904875A JPS5261976A JP S5261976 A JPS5261976 A JP S5261976A JP 50139048 A JP50139048 A JP 50139048A JP 13904875 A JP13904875 A JP 13904875A JP S5261976 A JPS5261976 A JP S5261976A
Authority
JP
Japan
Prior art keywords
production
integrated circuit
semiconductor integrated
circuit device
buried layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50139048A
Other languages
Japanese (ja)
Inventor
Haruyasu Yamada
Toyoki Takemoto
Atsushi Shibata
Tsutomu Fujita
Toshiki Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50139048A priority Critical patent/JPS5261976A/en
Publication of JPS5261976A publication Critical patent/JPS5261976A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To increase electron injection efficiency and increase the hFE of an I<2>L by reducing the distance between the buried layer of the I<2>L and the base layer of the vertical transistor on the I<2>L through the use of the raise of a buried layer forming impurity, in an IC circuit including the I<2>L and bipolar transistor.
JP50139048A 1975-11-18 1975-11-18 Semiconductor integrated circuit device and its production Pending JPS5261976A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50139048A JPS5261976A (en) 1975-11-18 1975-11-18 Semiconductor integrated circuit device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50139048A JPS5261976A (en) 1975-11-18 1975-11-18 Semiconductor integrated circuit device and its production

Publications (1)

Publication Number Publication Date
JPS5261976A true JPS5261976A (en) 1977-05-21

Family

ID=15236240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50139048A Pending JPS5261976A (en) 1975-11-18 1975-11-18 Semiconductor integrated circuit device and its production

Country Status (1)

Country Link
JP (1) JPS5261976A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS533781A (en) * 1976-06-30 1978-01-13 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS5388586A (en) * 1977-01-12 1978-08-04 Rca Corp Semiconductor ic
JPS5585052A (en) * 1978-02-15 1980-06-26 Rca Corp Semiconductor integrated circuit and method of fabricating same
US4680768A (en) * 1984-07-19 1987-07-14 Sanyo Electric Co., Ltd. Semiconductor laser with a quantum well layer including a disordered region

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS533781A (en) * 1976-06-30 1978-01-13 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS5388586A (en) * 1977-01-12 1978-08-04 Rca Corp Semiconductor ic
JPS5585052A (en) * 1978-02-15 1980-06-26 Rca Corp Semiconductor integrated circuit and method of fabricating same
US4680768A (en) * 1984-07-19 1987-07-14 Sanyo Electric Co., Ltd. Semiconductor laser with a quantum well layer including a disordered region

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