JPS5512773A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS5512773A
JPS5512773A JP8580678A JP8580678A JPS5512773A JP S5512773 A JPS5512773 A JP S5512773A JP 8580678 A JP8580678 A JP 8580678A JP 8580678 A JP8580678 A JP 8580678A JP S5512773 A JPS5512773 A JP S5512773A
Authority
JP
Japan
Prior art keywords
film
photoresistor
metallic electrode
covered
electrode wirings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8580678A
Other languages
Japanese (ja)
Inventor
Yoshihiko Hirose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8580678A priority Critical patent/JPS5512773A/en
Publication of JPS5512773A publication Critical patent/JPS5512773A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To provide an electrode protective film safely and firmly by supplying ions thus solidifying a photoresistor after the photoresistor is covered on metallic electrode wirings except a bonding pad section.
CONSTITUTION: Active regions 3 and 4 are formed in a semiconductor substrate 1 before metallic electrode wirings 71 and 72 are formed. A photoresistor film 9 is covered on the metallic electrode wirings 71 and 72; then the film 9 located only on a bonding pad section is completely removed. Ions 10 are supplied from above the photoresistor film 9 and the film 9 is solidified, thus forming an electrode protective film.
COPYRIGHT: (C)1980,JPO&Japio
JP8580678A 1978-07-13 1978-07-13 Manufacturing method of semiconductor device Pending JPS5512773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8580678A JPS5512773A (en) 1978-07-13 1978-07-13 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8580678A JPS5512773A (en) 1978-07-13 1978-07-13 Manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5512773A true JPS5512773A (en) 1980-01-29

Family

ID=13869109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8580678A Pending JPS5512773A (en) 1978-07-13 1978-07-13 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5512773A (en)

Similar Documents

Publication Publication Date Title
JPS5430777A (en) Manufacture of semiconductor device
JPS54154272A (en) Contact forming method for semiconductor device
JPS5512773A (en) Manufacturing method of semiconductor device
JPS52117550A (en) Electrode formation method
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS5261960A (en) Production of semiconductor device
JPS5379382A (en) Forming method of passivation film
JPS5766651A (en) Manufacture of semiconductor device
JPS547867A (en) Manufacture for semiconductor device
JPS52155055A (en) Production of semiconductor device
JPS5376A (en) Manufacture of semiconductor device
JPS51112266A (en) Semiconductor device production method
JPS52131456A (en) Forming method of electrode
JPS5311583A (en) Production and apparatus for integrated circuits wafers
JPS5412684A (en) Manufacture of semiconductor device
JPS5399781A (en) Manufacture of semiconductor integrated circuit device
JPS548467A (en) Photo etching method
JPS5267580A (en) Semiconductor integrated circuit and manufacturing method thereof
JPS5522853A (en) Manufacturing method of semiconductor device
JPS544067A (en) Electrode forming method of semiconductor device
JPS53120272A (en) Manufacture of semiconductor device
JPS52116075A (en) Preparation of film for protecting surface of electronic parts
JPS5367362A (en) Manufacture of semiconductor device
JPS5493971A (en) Production of semiconductor device
JPS5428566A (en) Manufacture of semiconductor device