JPS5376A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5376A
JPS5376A JP7483576A JP7483576A JPS5376A JP S5376 A JPS5376 A JP S5376A JP 7483576 A JP7483576 A JP 7483576A JP 7483576 A JP7483576 A JP 7483576A JP S5376 A JPS5376 A JP S5376A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
solidphase
psg
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7483576A
Other languages
Japanese (ja)
Inventor
Katsuhiro Tsukamoto
Yoichi Akasaka
Kazuo Horie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7483576A priority Critical patent/JPS5376A/en
Publication of JPS5376A publication Critical patent/JPS5376A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To form a good-quality surface protective insulation film comprising PSG and SiO2 using a combination of the ion injection method and the solidphase diffusion method.
COPYRIGHT: (C)1978,JPO&Japio
JP7483576A 1976-06-23 1976-06-23 Manufacture of semiconductor device Pending JPS5376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7483576A JPS5376A (en) 1976-06-23 1976-06-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7483576A JPS5376A (en) 1976-06-23 1976-06-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5376A true JPS5376A (en) 1978-01-05

Family

ID=13558781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7483576A Pending JPS5376A (en) 1976-06-23 1976-06-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5376A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62257507A (en) * 1986-05-02 1987-11-10 Mitsubishi Electric Corp Numerical controller
DE4110906A1 (en) * 1990-04-04 1991-10-17 Gold Star Electronics METHOD FOR PRODUCING CELLS WITH AT LEAST ONE SELF-ALIGNED CAPACITOR CONTACT, AND CELL STRUCTURE WITH AT LEAST ONE SELF-ALIGNED CAPACITOR CONTACT

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62257507A (en) * 1986-05-02 1987-11-10 Mitsubishi Electric Corp Numerical controller
DE4110906A1 (en) * 1990-04-04 1991-10-17 Gold Star Electronics METHOD FOR PRODUCING CELLS WITH AT LEAST ONE SELF-ALIGNED CAPACITOR CONTACT, AND CELL STRUCTURE WITH AT LEAST ONE SELF-ALIGNED CAPACITOR CONTACT
DE4110906C2 (en) * 1990-04-04 1998-07-02 Gold Star Electronics Method for producing DRAM cells with at least one self-aligned capacitor contact and cell structure with at least one self-aligned capacitor contact

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