JPS55133560A - Method of fabricating semiconductor element - Google Patents

Method of fabricating semiconductor element

Info

Publication number
JPS55133560A
JPS55133560A JP4013279A JP4013279A JPS55133560A JP S55133560 A JPS55133560 A JP S55133560A JP 4013279 A JP4013279 A JP 4013279A JP 4013279 A JP4013279 A JP 4013279A JP S55133560 A JPS55133560 A JP S55133560A
Authority
JP
Japan
Prior art keywords
pieces
crystal
type gaas
layer
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4013279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6216548B2 (fr
Inventor
Nobuhiko Fujine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4013279A priority Critical patent/JPS55133560A/ja
Publication of JPS55133560A publication Critical patent/JPS55133560A/ja
Publication of JPS6216548B2 publication Critical patent/JPS6216548B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP4013279A 1979-04-03 1979-04-03 Method of fabricating semiconductor element Granted JPS55133560A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4013279A JPS55133560A (en) 1979-04-03 1979-04-03 Method of fabricating semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4013279A JPS55133560A (en) 1979-04-03 1979-04-03 Method of fabricating semiconductor element

Publications (2)

Publication Number Publication Date
JPS55133560A true JPS55133560A (en) 1980-10-17
JPS6216548B2 JPS6216548B2 (fr) 1987-04-13

Family

ID=12572272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4013279A Granted JPS55133560A (en) 1979-04-03 1979-04-03 Method of fabricating semiconductor element

Country Status (1)

Country Link
JP (1) JPS55133560A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6078141A (en) * 1997-11-04 2000-06-20 Samsung Electronics Co., Ltd. Magnetron with improved vanes

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946875A (fr) * 1972-09-09 1974-05-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946875A (fr) * 1972-09-09 1974-05-07

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6078141A (en) * 1997-11-04 2000-06-20 Samsung Electronics Co., Ltd. Magnetron with improved vanes

Also Published As

Publication number Publication date
JPS6216548B2 (fr) 1987-04-13

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