JPS6216548B2 - - Google Patents

Info

Publication number
JPS6216548B2
JPS6216548B2 JP54040132A JP4013279A JPS6216548B2 JP S6216548 B2 JPS6216548 B2 JP S6216548B2 JP 54040132 A JP54040132 A JP 54040132A JP 4013279 A JP4013279 A JP 4013279A JP S6216548 B2 JPS6216548 B2 JP S6216548B2
Authority
JP
Japan
Prior art keywords
phs
conductive film
manufacturing
present
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54040132A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55133560A (en
Inventor
Nobuhiko Fujine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP4013279A priority Critical patent/JPS55133560A/ja
Publication of JPS55133560A publication Critical patent/JPS55133560A/ja
Publication of JPS6216548B2 publication Critical patent/JPS6216548B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP4013279A 1979-04-03 1979-04-03 Method of fabricating semiconductor element Granted JPS55133560A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4013279A JPS55133560A (en) 1979-04-03 1979-04-03 Method of fabricating semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4013279A JPS55133560A (en) 1979-04-03 1979-04-03 Method of fabricating semiconductor element

Publications (2)

Publication Number Publication Date
JPS55133560A JPS55133560A (en) 1980-10-17
JPS6216548B2 true JPS6216548B2 (fr) 1987-04-13

Family

ID=12572272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4013279A Granted JPS55133560A (en) 1979-04-03 1979-04-03 Method of fabricating semiconductor element

Country Status (1)

Country Link
JP (1) JPS55133560A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2330942B (en) * 1997-11-04 1999-09-15 Samsung Electronics Co Ltd Magnetron

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226869B2 (fr) * 1972-09-09 1977-07-16

Also Published As

Publication number Publication date
JPS55133560A (en) 1980-10-17

Similar Documents

Publication Publication Date Title
US4536469A (en) Semiconductor structures and manufacturing methods
US4339870A (en) Series-connected two-terminal semiconductor devices and their fabrication
US9397022B2 (en) Semiconductor device having a locally reinforced metallization structure
US2992471A (en) Formation of p-n junctions in p-type semiconductors
US4197551A (en) Semiconductor device having improved Schottky-barrier junction
US3988762A (en) Minority carrier isolation barriers for semiconductor devices
US4499659A (en) Semiconductor structures and manufacturing methods
US3116443A (en) Semiconductor device
US4142893A (en) Spray etch dicing method
US3490140A (en) Methods for making semiconductor devices
US3913215A (en) Process for the production of a semiconductor component
US3271636A (en) Gallium arsenide semiconductor diode and method
JPS6216548B2 (fr)
US3099776A (en) Indium antimonide transistor
US3874918A (en) Structure and process for semiconductor device using batch processing
US5144413A (en) Semiconductor structures and manufacturing methods
US3535772A (en) Semiconductor device fabrication processes
US4374012A (en) Method of making semiconductor device having improved Schottky-barrier junction
JP3545887B2 (ja) ガンダイオード及びその製造方法
US4661834A (en) Semiconductor structures and manufacturing methods
US3518749A (en) Method of making gunn-effect devices
US5418181A (en) Method of fabricating diode using grid recess
JPH01503423A (ja) ２端子半導体ダイオード装置
EP0077893A3 (fr) Contacts ohmiques à basse résistance pour des semi-conducteurs du groupe III-V à type n
JP4542508B2 (ja) 垂直型発光ダイオードおよびその製造方法