JPS55144247A - Preparation of photomask - Google Patents

Preparation of photomask

Info

Publication number
JPS55144247A
JPS55144247A JP5391379A JP5391379A JPS55144247A JP S55144247 A JPS55144247 A JP S55144247A JP 5391379 A JP5391379 A JP 5391379A JP 5391379 A JP5391379 A JP 5391379A JP S55144247 A JPS55144247 A JP S55144247A
Authority
JP
Japan
Prior art keywords
resist
low reflection
chromium layer
chromium
photomask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5391379A
Other languages
Japanese (ja)
Inventor
Tadao Kato
Akira Shigetomi
Yaichiro Watakabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5391379A priority Critical patent/JPS55144247A/en
Publication of JPS55144247A publication Critical patent/JPS55144247A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To prepare a hard type photomask by using a combination of means of electron beam irradiation, etching, etc. against a polymer layer formed on a low reflection chromium layer provided on a glass substrate. CONSTITUTION:Resist 14 for electron beams is coated on a low reflection chromium layer consisting of chromium film 12 and chromium oxide film 13 formed on glass substrate 11, resist 14 is irradiated by electron beams 10 patternwise as it is kept at a constant high temperature, and resist 14 in the irradiated parts is evaporated to form exposed parts 15 of the chromium layer. The low reflection chromium layer under parts 15 is removed by wet chemical etching, dry etching, or such method using the above resist film as a mask, and remaining resist 14 is removed to obtain a photomask.
JP5391379A 1979-04-27 1979-04-27 Preparation of photomask Pending JPS55144247A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5391379A JPS55144247A (en) 1979-04-27 1979-04-27 Preparation of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5391379A JPS55144247A (en) 1979-04-27 1979-04-27 Preparation of photomask

Publications (1)

Publication Number Publication Date
JPS55144247A true JPS55144247A (en) 1980-11-11

Family

ID=12955943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5391379A Pending JPS55144247A (en) 1979-04-27 1979-04-27 Preparation of photomask

Country Status (1)

Country Link
JP (1) JPS55144247A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6309976B1 (en) * 1999-03-22 2001-10-30 Taiwan Semiconductor Manufacturing Company Critical dimension controlled method of plasma descum for conventional quarter micron and smaller dimension binary mask manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6309976B1 (en) * 1999-03-22 2001-10-30 Taiwan Semiconductor Manufacturing Company Critical dimension controlled method of plasma descum for conventional quarter micron and smaller dimension binary mask manufacture

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