JPS5655044A - Formation of resist pattern - Google Patents

Formation of resist pattern

Info

Publication number
JPS5655044A
JPS5655044A JP13103279A JP13103279A JPS5655044A JP S5655044 A JPS5655044 A JP S5655044A JP 13103279 A JP13103279 A JP 13103279A JP 13103279 A JP13103279 A JP 13103279A JP S5655044 A JPS5655044 A JP S5655044A
Authority
JP
Japan
Prior art keywords
resist film
film
mask
positive type
novolac
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13103279A
Other languages
Japanese (ja)
Inventor
Masanao Itoga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13103279A priority Critical patent/JPS5655044A/en
Publication of JPS5655044A publication Critical patent/JPS5655044A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To enhance the accuracy of a pattern of an IC or LSI by coating a novolac series resist mask with a high sensitivity positive type regist pattern and patterning the resist film of a lower layer with the esist film of an upper layer as a mask. CONSTITUTION:A novolac series resist film 2 is coated on a semiconductor substrate 1, and a high sensitivity positive type resist film 3 is coated thereon. The film 3 is selectively evaporated and scattered by an electron beam exposure. Subsequently, with the positive type resist film as a mask the novolac series resist film is developed, and the exposed portion is selectively removed. Since the sensitivity of the novelac series resist film having preferable dry etching property is thus improved, the patterining accuracy of an IC can be thus improved.
JP13103279A 1979-10-11 1979-10-11 Formation of resist pattern Pending JPS5655044A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13103279A JPS5655044A (en) 1979-10-11 1979-10-11 Formation of resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13103279A JPS5655044A (en) 1979-10-11 1979-10-11 Formation of resist pattern

Publications (1)

Publication Number Publication Date
JPS5655044A true JPS5655044A (en) 1981-05-15

Family

ID=15048417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13103279A Pending JPS5655044A (en) 1979-10-11 1979-10-11 Formation of resist pattern

Country Status (1)

Country Link
JP (1) JPS5655044A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589323A (en) * 1981-07-10 1983-01-19 Nippon Telegr & Teleph Corp <Ntt> Formation of fine resist pattern
JPS5965432A (en) * 1982-09-10 1984-04-13 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Method of producing semiconductor device
JPS6091639A (en) * 1983-10-26 1985-05-23 Alps Electric Co Ltd Formation of photo resist pattern

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51129190A (en) * 1975-05-02 1976-11-10 Fujitsu Ltd Manufacturing method of semiconductor
JPS52122477A (en) * 1976-04-07 1977-10-14 Hitachi Ltd Processing of thin film patterns
JPS5324782A (en) * 1976-08-20 1978-03-07 Nippon Telegr & Teleph Corp <Ntt> Forming method of high molecular film patterns by negative resist

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51129190A (en) * 1975-05-02 1976-11-10 Fujitsu Ltd Manufacturing method of semiconductor
JPS52122477A (en) * 1976-04-07 1977-10-14 Hitachi Ltd Processing of thin film patterns
JPS5324782A (en) * 1976-08-20 1978-03-07 Nippon Telegr & Teleph Corp <Ntt> Forming method of high molecular film patterns by negative resist

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589323A (en) * 1981-07-10 1983-01-19 Nippon Telegr & Teleph Corp <Ntt> Formation of fine resist pattern
JPS5965432A (en) * 1982-09-10 1984-04-13 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Method of producing semiconductor device
JPS6091639A (en) * 1983-10-26 1985-05-23 Alps Electric Co Ltd Formation of photo resist pattern

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