JPS55145178A - Precision working method of solid surface - Google Patents

Precision working method of solid surface

Info

Publication number
JPS55145178A
JPS55145178A JP5344979A JP5344979A JPS55145178A JP S55145178 A JPS55145178 A JP S55145178A JP 5344979 A JP5344979 A JP 5344979A JP 5344979 A JP5344979 A JP 5344979A JP S55145178 A JPS55145178 A JP S55145178A
Authority
JP
Japan
Prior art keywords
mask
laser
substrate
wave
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5344979A
Other languages
Japanese (ja)
Other versions
JPS5637307B2 (en
Inventor
Toshio Tsurushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP5344979A priority Critical patent/JPS55145178A/en
Publication of JPS55145178A publication Critical patent/JPS55145178A/en
Publication of JPS5637307B2 publication Critical patent/JPS5637307B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To work a plane shape precisely, and to improve etching reproducibility in the direction of depth, by irradiating the surface of a solid with ions to form damaged portions in which the geometrical shape of a mask is reflected correctly, then by conducting etching.
CONSTITUTION: In forming a diffraction grating on the surface of a GaAs crystal, a resist 12' is applied uniformly on the GaAs substrate 11, and the resist 12' is exposed to a laser using the interference effect of the laser and is developed to form a mask 12 having wave-like sectional shape of submicron period which depends upon the wave length of the laser. A beam 13 such as that of Ar+ etc. is irradiated through the mask 12 on the substrate 11 to form damaged parts 14 in the substrate 11. Then the maks 12 is removed, and etching is conducted, thereby forming GaAs crystal having wave-like surface shape of submicron period. Hence this method permits to form a diffraction grating having concave and convex structure of regular period.
COPYRIGHT: (C)1980,JPO&Japio
JP5344979A 1979-05-02 1979-05-02 Precision working method of solid surface Granted JPS55145178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5344979A JPS55145178A (en) 1979-05-02 1979-05-02 Precision working method of solid surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5344979A JPS55145178A (en) 1979-05-02 1979-05-02 Precision working method of solid surface

Publications (2)

Publication Number Publication Date
JPS55145178A true JPS55145178A (en) 1980-11-12
JPS5637307B2 JPS5637307B2 (en) 1981-08-29

Family

ID=12943154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5344979A Granted JPS55145178A (en) 1979-05-02 1979-05-02 Precision working method of solid surface

Country Status (1)

Country Link
JP (1) JPS55145178A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6371851A (en) * 1986-09-16 1988-04-01 Hitachi Ltd Diffraction grating manufacturing method and automask used therein
JPS63111187A (en) * 1986-10-29 1988-05-16 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション Etching method using electromagnetic radioactive rays

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4880440A (en) * 1972-02-02 1973-10-27

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4880440A (en) * 1972-02-02 1973-10-27

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6371851A (en) * 1986-09-16 1988-04-01 Hitachi Ltd Diffraction grating manufacturing method and automask used therein
JPS63111187A (en) * 1986-10-29 1988-05-16 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション Etching method using electromagnetic radioactive rays

Also Published As

Publication number Publication date
JPS5637307B2 (en) 1981-08-29

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