JPS55145366A - Ohmic electrode of n-type semiconductor of groups 3-5 metals in periodic table and forming method of the same - Google Patents

Ohmic electrode of n-type semiconductor of groups 3-5 metals in periodic table and forming method of the same

Info

Publication number
JPS55145366A
JPS55145366A JP5390679A JP5390679A JPS55145366A JP S55145366 A JPS55145366 A JP S55145366A JP 5390679 A JP5390679 A JP 5390679A JP 5390679 A JP5390679 A JP 5390679A JP S55145366 A JPS55145366 A JP S55145366A
Authority
JP
Japan
Prior art keywords
layer
ohmic electrode
metals
groups
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5390679A
Other languages
Japanese (ja)
Other versions
JPS5950213B2 (en
Inventor
Kotaro Mitsui
Susumu Yoshida
Josuke Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP54053906A priority Critical patent/JPS5950213B2/en
Publication of JPS55145366A publication Critical patent/JPS55145366A/en
Publication of JPS5950213B2 publication Critical patent/JPS5950213B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve the yield and the reliability of an ohmic electrode and to reduce the cost thereof by forming the electrode of germanium, nickel and aluminum to rigidly and easily bonding it via wire. CONSTITUTION:A wafer made of n-type GaAs substrate 1 or the like is heated at 100-450 deg.C in vacuum, and Ge is vacuum evaporated through a mask on the surface of the substrate 1 thus heated to form a Ge layer thereon. Then, Ni is similarly vacuum evaporated on the Ge layer to form an Ni layer thereon, and aluminum is similarly vacuum evaporated on the Ni layer to form an aluminum layer thereon. Thereafter, the wafer formed with the Ge, Ni and Al layers is heated at 450- 550 deg.C in inert or reducing atmosphere or in vacuum. Thus, ohmic electrodes 5 made of a number of Ge, Ni and Al are selectively formed on the substrate 1.
JP54053906A 1979-04-27 1979-04-27 N-type gallium arsenide ohmic electrode and its formation method Expired JPS5950213B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54053906A JPS5950213B2 (en) 1979-04-27 1979-04-27 N-type gallium arsenide ohmic electrode and its formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54053906A JPS5950213B2 (en) 1979-04-27 1979-04-27 N-type gallium arsenide ohmic electrode and its formation method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62205511A Division JPS63126272A (en) 1987-08-18 1987-08-18 Formation of ohmic electrode of n-type gallium arsenide

Publications (2)

Publication Number Publication Date
JPS55145366A true JPS55145366A (en) 1980-11-12
JPS5950213B2 JPS5950213B2 (en) 1984-12-07

Family

ID=12955751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54053906A Expired JPS5950213B2 (en) 1979-04-27 1979-04-27 N-type gallium arsenide ohmic electrode and its formation method

Country Status (1)

Country Link
JP (1) JPS5950213B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57114229A (en) * 1981-01-07 1982-07-16 Nippon Telegr & Teleph Corp <Ntt> Manufacture of ohmic electrode
JPS63126272A (en) * 1987-08-18 1988-05-30 Mitsubishi Electric Corp Formation of ohmic electrode of n-type gallium arsenide
WO1989004057A1 (en) * 1987-10-20 1989-05-05 Bell Communications Research, Inc. Epitaxial intermetallic contact for compound semiconductors
US10996285B2 (en) 2013-11-19 2021-05-04 Hyun Chang Lee Method of detecting earth leaking point without interrupting a power supply

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5063877A (en) * 1973-09-26 1975-05-30
JPS54134558A (en) * 1978-04-10 1979-10-19 Nec Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5063877A (en) * 1973-09-26 1975-05-30
JPS54134558A (en) * 1978-04-10 1979-10-19 Nec Corp Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57114229A (en) * 1981-01-07 1982-07-16 Nippon Telegr & Teleph Corp <Ntt> Manufacture of ohmic electrode
JPS63126272A (en) * 1987-08-18 1988-05-30 Mitsubishi Electric Corp Formation of ohmic electrode of n-type gallium arsenide
WO1989004057A1 (en) * 1987-10-20 1989-05-05 Bell Communications Research, Inc. Epitaxial intermetallic contact for compound semiconductors
US10996285B2 (en) 2013-11-19 2021-05-04 Hyun Chang Lee Method of detecting earth leaking point without interrupting a power supply
USRE50683E1 (en) 2013-11-19 2025-12-02 Hyun Chang Lee Method of detecting earth leaking point without interrupting a power supply

Also Published As

Publication number Publication date
JPS5950213B2 (en) 1984-12-07

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