JPS5768022A - Manufacture of compound semiconductor device - Google Patents
Manufacture of compound semiconductor deviceInfo
- Publication number
- JPS5768022A JPS5768022A JP55142884A JP14288480A JPS5768022A JP S5768022 A JPS5768022 A JP S5768022A JP 55142884 A JP55142884 A JP 55142884A JP 14288480 A JP14288480 A JP 14288480A JP S5768022 A JPS5768022 A JP S5768022A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin layer
- thick
- crystal
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain an electrode having microminiature pattern without lateral expansion by forming a laminar structure in which an Ni thin layer and an Au-Ge eutectic alloy thin layer as well as an Ni thin layer are laminated when an electrode is provided on the N type or N<+> type GaAs crystalline surface, and then heat treating it as ohmic contact part. CONSTITUTION:An Ni thin film 12 of 30-150Angstrom thick, an Au-Ge eutectic alloy thin layer 13 of 1,000-2,000Angstrom thick and 88:12 of Au:Ge and an Ni thin layer 14 of 200-400Angstrom thick are sequentially laminated and deposited in vaccum on the surface of N type or N<+> type GaAs crystal 11. Thereafter, it is heat treated at 350- 425 deg.C for 5min, thereby producing a preferably ohmic contact with the crystal 11. In this manner, when the layer 13 is in molten state, the layer 12 prevents the contact of the layer 13 with the crystal 11, a part of the Ni of the layers 12, 14 is dissolved in the layer 13 to raise the melting point of the layer 13, and the solution reaction of the Ni can be suppressed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55142884A JPS5768022A (en) | 1980-10-15 | 1980-10-15 | Manufacture of compound semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55142884A JPS5768022A (en) | 1980-10-15 | 1980-10-15 | Manufacture of compound semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5768022A true JPS5768022A (en) | 1982-04-26 |
Family
ID=15325827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55142884A Pending JPS5768022A (en) | 1980-10-15 | 1980-10-15 | Manufacture of compound semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5768022A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS641230A (en) * | 1987-06-23 | 1989-01-05 | Mitsubishi Electric Corp | Formation of ohmic electrode |
| US5358899A (en) * | 1991-10-25 | 1994-10-25 | International Business Machines Corporation | Oxygen assisted ohmic contact formation to n-type gallium arsenide |
-
1980
- 1980-10-15 JP JP55142884A patent/JPS5768022A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS641230A (en) * | 1987-06-23 | 1989-01-05 | Mitsubishi Electric Corp | Formation of ohmic electrode |
| US5358899A (en) * | 1991-10-25 | 1994-10-25 | International Business Machines Corporation | Oxygen assisted ohmic contact formation to n-type gallium arsenide |
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