JPS55148420A - Manufacturing of carbonized silicon crystal layer - Google Patents

Manufacturing of carbonized silicon crystal layer

Info

Publication number
JPS55148420A
JPS55148420A JP5612079A JP5612079A JPS55148420A JP S55148420 A JPS55148420 A JP S55148420A JP 5612079 A JP5612079 A JP 5612079A JP 5612079 A JP5612079 A JP 5612079A JP S55148420 A JPS55148420 A JP S55148420A
Authority
JP
Japan
Prior art keywords
sic
layer
substrate
seed crystal
crystal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5612079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS626644B2 (cs
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5612079A priority Critical patent/JPS55148420A/ja
Priority to DE3002671A priority patent/DE3002671C2/de
Publication of JPS55148420A publication Critical patent/JPS55148420A/ja
Priority to US06/369,911 priority patent/US4582561A/en
Publication of JPS626644B2 publication Critical patent/JPS626644B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP5612079A 1979-01-25 1979-05-07 Manufacturing of carbonized silicon crystal layer Granted JPS55148420A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5612079A JPS55148420A (en) 1979-05-07 1979-05-07 Manufacturing of carbonized silicon crystal layer
DE3002671A DE3002671C2 (de) 1979-01-25 1980-01-25 Verfahren zur Herstellung eines Siliciumcarbidsubstrats
US06/369,911 US4582561A (en) 1979-01-25 1982-04-19 Method for making a silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5612079A JPS55148420A (en) 1979-05-07 1979-05-07 Manufacturing of carbonized silicon crystal layer

Publications (2)

Publication Number Publication Date
JPS55148420A true JPS55148420A (en) 1980-11-19
JPS626644B2 JPS626644B2 (cs) 1987-02-12

Family

ID=13018202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5612079A Granted JPS55148420A (en) 1979-01-25 1979-05-07 Manufacturing of carbonized silicon crystal layer

Country Status (1)

Country Link
JP (1) JPS55148420A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05322008A (ja) * 1992-05-22 1993-12-07 Kawasaki Heavy Ind Ltd トランスミッションの潤滑方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0175747U (cs) * 1987-11-09 1989-05-23

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05322008A (ja) * 1992-05-22 1993-12-07 Kawasaki Heavy Ind Ltd トランスミッションの潤滑方法

Also Published As

Publication number Publication date
JPS626644B2 (cs) 1987-02-12

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