JPS5529155A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5529155A
JPS5529155A JP10251778A JP10251778A JPS5529155A JP S5529155 A JPS5529155 A JP S5529155A JP 10251778 A JP10251778 A JP 10251778A JP 10251778 A JP10251778 A JP 10251778A JP S5529155 A JPS5529155 A JP S5529155A
Authority
JP
Japan
Prior art keywords
band
type layer
grow
joints
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10251778A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP10251778A priority Critical patent/JPS5529155A/en
Publication of JPS5529155A publication Critical patent/JPS5529155A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Led Devices (AREA)

Abstract

PURPOSE:To eliminate unevenness of crystal pattern and occurrence of crystal defect, when forming same kind or different kind of joints on a non-single crystal semiconductor, by changing continuously one or both of a conduction band and a valence electron band of every band on the joints. CONSTITUTION:On an electroconductive base plate such as metal and semiconductor, etc., or an insulated base plate such as polyamide and vinyl acetate, etc., a joint is formed by using a reactor made of quartz, etc. Thus, the reactor is charged with these base plates, kept at reduced pressure of 0.1-10 Torr, supplied with gaseous silicic compound such as SiH4, carrier gas such as H2 and PH3 and AsH3 containing P and As, so that an n type layer is allowed to grow. Further, a p type layer is allowed to grow on the n type layer by turning impurities into a chloride containing Al, Ga and B. At the same time, all the impurities are controlled to 10<14>-5X 10<22>/cm<3> and the temperature is selected within a range of 350 deg.C-900 deg.C so that variation of a coduction band and a valence electron band can be continuously maintained.
JP10251778A 1978-08-23 1978-08-23 Semiconductor device Pending JPS5529155A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10251778A JPS5529155A (en) 1978-08-23 1978-08-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10251778A JPS5529155A (en) 1978-08-23 1978-08-23 Semiconductor device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP1989981A Division JPS56150881A (en) 1981-02-13 1981-02-13 Semicondutor device
JP57070144A Division JPS57184257A (en) 1982-04-26 1982-04-26 Photoelectric converter

Publications (1)

Publication Number Publication Date
JPS5529155A true JPS5529155A (en) 1980-03-01

Family

ID=14329539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10251778A Pending JPS5529155A (en) 1978-08-23 1978-08-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5529155A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57126254U (en) * 1981-02-02 1982-08-06
JPS57128806U (en) * 1981-02-07 1982-08-11
JPS57129368U (en) * 1981-02-07 1982-08-12
JPS57134695U (en) * 1981-02-13 1982-08-21
US4527179A (en) * 1981-02-09 1985-07-02 Semiconductor Energy Laboratory Co., Ltd. Non-single-crystal light emitting semiconductor device
JPS6164175A (en) * 1984-09-06 1986-04-02 Ulvac Corp Amorphous semiconductor light emitting diode and flat display device using the same
JPS62144365A (en) * 1985-12-18 1987-06-27 Nec Corp Laminated structure
JPS63185077A (en) * 1987-01-27 1988-07-30 Matsushita Electric Ind Co Ltd Blue light emitting diode
JPH07169985A (en) * 1994-10-27 1995-07-04 Semiconductor Energy Lab Co Ltd Semiconductor device
JPH08274361A (en) * 1996-02-05 1996-10-18 Semiconductor Energy Lab Co Ltd Semiconductor device
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5093585A (en) * 1973-12-19 1975-07-25

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5093585A (en) * 1973-12-19 1975-07-25

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57126254U (en) * 1981-02-02 1982-08-06
JPS57128806U (en) * 1981-02-07 1982-08-11
JPS57129368U (en) * 1981-02-07 1982-08-12
US4527179A (en) * 1981-02-09 1985-07-02 Semiconductor Energy Laboratory Co., Ltd. Non-single-crystal light emitting semiconductor device
US4984034A (en) * 1981-02-09 1991-01-08 Semiconductor Energy Laboratory Co., Ltd. Non-single-crystalline light emitting semiconductor device matrix with insulation
JPS57134695U (en) * 1981-02-13 1982-08-21
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JPS6164175A (en) * 1984-09-06 1986-04-02 Ulvac Corp Amorphous semiconductor light emitting diode and flat display device using the same
JPS62144365A (en) * 1985-12-18 1987-06-27 Nec Corp Laminated structure
JPS63185077A (en) * 1987-01-27 1988-07-30 Matsushita Electric Ind Co Ltd Blue light emitting diode
JPH07169985A (en) * 1994-10-27 1995-07-04 Semiconductor Energy Lab Co Ltd Semiconductor device
JPH08274361A (en) * 1996-02-05 1996-10-18 Semiconductor Energy Lab Co Ltd Semiconductor device

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