JPS55149198A - Manufacture of silicon carbide substrate - Google Patents

Manufacture of silicon carbide substrate

Info

Publication number
JPS55149198A
JPS55149198A JP5613479A JP5613479A JPS55149198A JP S55149198 A JPS55149198 A JP S55149198A JP 5613479 A JP5613479 A JP 5613479A JP 5613479 A JP5613479 A JP 5613479A JP S55149198 A JPS55149198 A JP S55149198A
Authority
JP
Japan
Prior art keywords
substrate
seed layer
temp
sic
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5613479A
Other languages
Japanese (ja)
Other versions
JPS6120520B2 (en
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5613479A priority Critical patent/JPS55149198A/en
Priority to DE3002671A priority patent/DE3002671C2/en
Publication of JPS55149198A publication Critical patent/JPS55149198A/en
Priority to US06/369,911 priority patent/US4582561A/en
Publication of JPS6120520B2 publication Critical patent/JPS6120520B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE: To form an SiC substrate on an SiC seed layer with high reproducibility by forming the seed layer on an Si substrate and melting the Si substrate while contacting a layer contg. starting material carbon to the Si substrate surface opposite to the seed layer forming surface.
CONSTITUTION: Reaction tube 22 is evacuated 32 and replaced with H2, and a surface layer of Si substrate 2 whose principal face is (111) face on carbon sheet 68 is removed by etching with known HCl-H2 mixed gas. The temp. of substrate 2 is set to the m.p. of Si or below, especially 1,100W1,200°C to grow SiC on substrate 2 by a general vapor phase growing method. Thus, Si-3C type mixed layers 4, 16 of 30μm thickness are formed respectively on the surface and side of substrate 2. Feed of starting material gases is then stopped, an atmosphere of H2 alone is formed, and by lowering seed layer heating stand 72 until it contacts to or nears seed layer 4, the temp. of sample stand 26 is raised to about 1,500°C to melt substrate 2. After the melting the temp. is set to a fixed temp. of about 1,450W1,650°C, and this state is maintained to form single crystal SiC secondary layer 14 of 10μm thickness.
COPYRIGHT: (C)1980,JPO&Japio
JP5613479A 1979-01-25 1979-05-07 Manufacture of silicon carbide substrate Granted JPS55149198A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5613479A JPS55149198A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate
DE3002671A DE3002671C2 (en) 1979-01-25 1980-01-25 Process for making a silicon carbide substrate
US06/369,911 US4582561A (en) 1979-01-25 1982-04-19 Method for making a silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5613479A JPS55149198A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate

Publications (2)

Publication Number Publication Date
JPS55149198A true JPS55149198A (en) 1980-11-20
JPS6120520B2 JPS6120520B2 (en) 1986-05-22

Family

ID=13018596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5613479A Granted JPS55149198A (en) 1979-01-25 1979-05-07 Manufacture of silicon carbide substrate

Country Status (1)

Country Link
JP (1) JPS55149198A (en)

Also Published As

Publication number Publication date
JPS6120520B2 (en) 1986-05-22

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