JPS55164076A - Method for dry etching - Google Patents

Method for dry etching

Info

Publication number
JPS55164076A
JPS55164076A JP7189979A JP7189979A JPS55164076A JP S55164076 A JPS55164076 A JP S55164076A JP 7189979 A JP7189979 A JP 7189979A JP 7189979 A JP7189979 A JP 7189979A JP S55164076 A JPS55164076 A JP S55164076A
Authority
JP
Japan
Prior art keywords
etching
dry etching
electrode
wafer
contacting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7189979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS618152B2 (2
Inventor
Toshihiko Osada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7189979A priority Critical patent/JPS55164076A/ja
Publication of JPS55164076A publication Critical patent/JPS55164076A/ja
Publication of JPS618152B2 publication Critical patent/JPS618152B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP7189979A 1979-06-08 1979-06-08 Method for dry etching Granted JPS55164076A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7189979A JPS55164076A (en) 1979-06-08 1979-06-08 Method for dry etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7189979A JPS55164076A (en) 1979-06-08 1979-06-08 Method for dry etching

Publications (2)

Publication Number Publication Date
JPS55164076A true JPS55164076A (en) 1980-12-20
JPS618152B2 JPS618152B2 (2) 1986-03-12

Family

ID=13473837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7189979A Granted JPS55164076A (en) 1979-06-08 1979-06-08 Method for dry etching

Country Status (1)

Country Link
JP (1) JPS55164076A (2)

Also Published As

Publication number Publication date
JPS618152B2 (2) 1986-03-12

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