JPS5516541A - Reverse-conducting gate turn-off thyristor circuit - Google Patents

Reverse-conducting gate turn-off thyristor circuit

Info

Publication number
JPS5516541A
JPS5516541A JP8897978A JP8897978A JPS5516541A JP S5516541 A JPS5516541 A JP S5516541A JP 8897978 A JP8897978 A JP 8897978A JP 8897978 A JP8897978 A JP 8897978A JP S5516541 A JPS5516541 A JP S5516541A
Authority
JP
Japan
Prior art keywords
type
reverse
region
emitter
gate turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8897978A
Other languages
Japanese (ja)
Other versions
JPS6122867B2 (en
Inventor
Terumichi Hirata
Shuzo Saeki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8897978A priority Critical patent/JPS5516541A/en
Priority to GB7920106A priority patent/GB2030796B/en
Priority to DE2927709A priority patent/DE2927709C2/en
Publication of JPS5516541A publication Critical patent/JPS5516541A/en
Publication of JPS6122867B2 publication Critical patent/JPS6122867B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
    • H03K17/732—Measures for enabling turn-off
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices

Landscapes

  • Thyristors (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE: To lower the price and to increase a turn-off gain by connecting a diode between the gate and cathode of a gate turnoff thyristor with the P-type emitter region at the anode side made into short-emitter structure.
CONSTITUTION: On the top surface of N-type base region 21, P-type base region 22 is formed and on part of its surface, N-type emitter region 23 is formed; on the reverse surface of N-type base region 21, short emitter region 26 is formed which consists of alternate P-type emitter regions 24 and N-type regions 25. On surfaces of P-type base region 22, N-type emitter region 23 and short emitter region 26, gate electrode 27, cathode 28 and anode 29 are formed and between gate electrode 27 and cathode electrode 28, diode 31 is connected.
COPYRIGHT: (C)1980,JPO&Japio
JP8897978A 1978-07-21 1978-07-21 Reverse-conducting gate turn-off thyristor circuit Granted JPS5516541A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8897978A JPS5516541A (en) 1978-07-21 1978-07-21 Reverse-conducting gate turn-off thyristor circuit
GB7920106A GB2030796B (en) 1978-07-21 1979-06-08 Thyristor circuit
DE2927709A DE2927709C2 (en) 1978-07-21 1979-07-09 Reverse-conducting switchable thyristor triode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8897978A JPS5516541A (en) 1978-07-21 1978-07-21 Reverse-conducting gate turn-off thyristor circuit

Publications (2)

Publication Number Publication Date
JPS5516541A true JPS5516541A (en) 1980-02-05
JPS6122867B2 JPS6122867B2 (en) 1986-06-03

Family

ID=13957911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8897978A Granted JPS5516541A (en) 1978-07-21 1978-07-21 Reverse-conducting gate turn-off thyristor circuit

Country Status (3)

Country Link
JP (1) JPS5516541A (en)
DE (1) DE2927709C2 (en)
GB (1) GB2030796B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH668505A5 (en) * 1985-03-20 1988-12-30 Bbc Brown Boveri & Cie SEMICONDUCTOR COMPONENT.
EP0337193A1 (en) * 1988-04-11 1989-10-18 Siemens Aktiengesellschaft Protection circuit for a gate turn off thyristor
DE4218398A1 (en) * 1992-06-04 1993-12-09 Asea Brown Boveri High current pulse thyristor with two opposite semiconductor main faces - has GTO structure with highly doped emitter distributed over first face in form of narrow cathode fingers

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5019437B1 (en) * 1970-06-08 1975-07-07

Also Published As

Publication number Publication date
DE2927709A1 (en) 1980-02-07
GB2030796A (en) 1980-04-10
GB2030796B (en) 1983-01-19
DE2927709C2 (en) 1984-04-05
JPS6122867B2 (en) 1986-06-03

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