JPS5516560A - Solid-state pickup unit - Google Patents

Solid-state pickup unit

Info

Publication number
JPS5516560A
JPS5516560A JP8933778A JP8933778A JPS5516560A JP S5516560 A JPS5516560 A JP S5516560A JP 8933778 A JP8933778 A JP 8933778A JP 8933778 A JP8933778 A JP 8933778A JP S5516560 A JPS5516560 A JP S5516560A
Authority
JP
Japan
Prior art keywords
photosensitive element
junction
depletion
junction part
short
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8933778A
Other languages
Japanese (ja)
Inventor
Tetsuo Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8933778A priority Critical patent/JPS5516560A/en
Publication of JPS5516560A publication Critical patent/JPS5516560A/en
Pending legal-status Critical Current

Links

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE: To improve sensitivity to a short-wavelength photo signal by exposing the pn junction part of a photo diode on the surface of a main semiconductor body of a unidirectional conduction type.
CONSTITUTION: Applying a positive voltage to storage electrode 24 forms a depletion region at the opposite pn junction part via insulating layer 24. The depletion layer under storage electrode 29 is stored with signal electron flux and only the depletion layer in photosensitive element 18 serves as a photoelectric conversion part. Part of the photosensitive element surface is covered with n-type impurity layer 18a to expose pn junction part 18c on the photosensitive element surface. In this structure, the pn-junction depletion region resides on the surface of the photosensitive element with much signal charge accumulated, thereby suppressing a light loss at the time of a short wavlelength.
COPYRIGHT: (C)1980,JPO&Japio
JP8933778A 1978-07-24 1978-07-24 Solid-state pickup unit Pending JPS5516560A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8933778A JPS5516560A (en) 1978-07-24 1978-07-24 Solid-state pickup unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8933778A JPS5516560A (en) 1978-07-24 1978-07-24 Solid-state pickup unit

Publications (1)

Publication Number Publication Date
JPS5516560A true JPS5516560A (en) 1980-02-05

Family

ID=13967868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8933778A Pending JPS5516560A (en) 1978-07-24 1978-07-24 Solid-state pickup unit

Country Status (1)

Country Link
JP (1) JPS5516560A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61115375A (en) * 1984-11-06 1986-06-02 エルザ　エルンスト　ザツハス　ケ−ジ−，ジ−エムビ−エツチ　アンド　カンパニ− Apparatus for removing ic from circuit board
KR20010061351A (en) * 1999-12-28 2001-07-07 박종섭 CMOS image sensor having photodiode coupled capacitor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61115375A (en) * 1984-11-06 1986-06-02 エルザ　エルンスト　ザツハス　ケ−ジ−，ジ−エムビ−エツチ　アンド　カンパニ− Apparatus for removing ic from circuit board
KR20010061351A (en) * 1999-12-28 2001-07-07 박종섭 CMOS image sensor having photodiode coupled capacitor

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