JPS5428581A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5428581A
JPS5428581A JP9384677A JP9384677A JPS5428581A JP S5428581 A JPS5428581 A JP S5428581A JP 9384677 A JP9384677 A JP 9384677A JP 9384677 A JP9384677 A JP 9384677A JP S5428581 A JPS5428581 A JP S5428581A
Authority
JP
Japan
Prior art keywords
type substrate
substrate layer
manufacture
semiconductor device
junction part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9384677A
Other languages
Japanese (ja)
Other versions
JPS5916417B2 (en
Inventor
Minoru Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9384677A priority Critical patent/JPS5916417B2/en
Publication of JPS5428581A publication Critical patent/JPS5428581A/en
Publication of JPS5916417B2 publication Critical patent/JPS5916417B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE: To secure a high-efficiency injection of the gold near the junction part of the N-type substrate layer and the P-type substrate layer of the anode side, by secureing a sufficient high density at the anode side through the B diffusion onto the N-type substrate and also securing a larger density slope at the junction part with the N-type substrate layer than that of the cathode side.
COPYRIGHT: (C)1979,JPO&Japio
JP9384677A 1977-08-04 1977-08-04 Manufacturing method of semiconductor device Expired JPS5916417B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9384677A JPS5916417B2 (en) 1977-08-04 1977-08-04 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9384677A JPS5916417B2 (en) 1977-08-04 1977-08-04 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5428581A true JPS5428581A (en) 1979-03-03
JPS5916417B2 JPS5916417B2 (en) 1984-04-16

Family

ID=14093760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9384677A Expired JPS5916417B2 (en) 1977-08-04 1977-08-04 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5916417B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5979571A (en) * 1982-10-29 1984-05-08 Toshiba Corp Thyristor
JPS608251U (en) * 1983-06-29 1985-01-21 興和特殊工業株式会社 Simple binding tool

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61118224A (en) * 1984-11-15 1986-06-05 Teito Rubber Seizo Kk Simultaneously extruding device of large number of irregular-shaped molded articles

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5979571A (en) * 1982-10-29 1984-05-08 Toshiba Corp Thyristor
JPS608251U (en) * 1983-06-29 1985-01-21 興和特殊工業株式会社 Simple binding tool

Also Published As

Publication number Publication date
JPS5916417B2 (en) 1984-04-16

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