JPS5519855A - Thin film condenser and manufacture thereof - Google Patents

Thin film condenser and manufacture thereof

Info

Publication number
JPS5519855A
JPS5519855A JP9282478A JP9282478A JPS5519855A JP S5519855 A JPS5519855 A JP S5519855A JP 9282478 A JP9282478 A JP 9282478A JP 9282478 A JP9282478 A JP 9282478A JP S5519855 A JPS5519855 A JP S5519855A
Authority
JP
Japan
Prior art keywords
thin film
insulating layer
type
semiconductor substrate
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9282478A
Other languages
Japanese (ja)
Inventor
Yoshihiko Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9282478A priority Critical patent/JPS5519855A/en
Publication of JPS5519855A publication Critical patent/JPS5519855A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:For increasing in the capacity density and improving in the heat resistance thin film condensers, to partially use the semiconductor substrate partially having a range with different type of conductance. CONSTITUTION:Insulating layer 22 is formed of silicon dioxide for example on the semiconductor substrate 21 of P-type silicon for example. Thereafter, N-type range 23 is formed to pass through the opening provided on said layer 24, and insulating layer 24 into a required form. Next, the thin film susceptible of anodization, such as tatalum thin film is attached to the semiconductor substrate B having N-type range and insulating layer, shaped into a raquired form, and changed into dielectric film 25 by anodization or heat oxidation method for example. Further, part of said insulating layer 24 is removed (C) for making a lower electrode, and electrodes 26 and 27 are formed so that a condenser is completed (D). Thus, a thin silm condenser with a high capacity density and superior in heat resistance can be obtained. P-type range can also be provided partially when providing N-type range on said substrate 21.
JP9282478A 1978-07-28 1978-07-28 Thin film condenser and manufacture thereof Pending JPS5519855A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9282478A JPS5519855A (en) 1978-07-28 1978-07-28 Thin film condenser and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9282478A JPS5519855A (en) 1978-07-28 1978-07-28 Thin film condenser and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5519855A true JPS5519855A (en) 1980-02-12

Family

ID=14065173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9282478A Pending JPS5519855A (en) 1978-07-28 1978-07-28 Thin film condenser and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5519855A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58220457A (en) * 1982-06-11 1983-12-22 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming dielectric material
JPS61156865A (en) * 1984-12-28 1986-07-16 Nec Corp Semiconductor device
JPH04121933U (en) * 1991-04-11 1992-10-30 株式会社ユーシン精機 Conveyance path selection device for fluid conveyor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58220457A (en) * 1982-06-11 1983-12-22 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming dielectric material
JPS61156865A (en) * 1984-12-28 1986-07-16 Nec Corp Semiconductor device
JPH04121933U (en) * 1991-04-11 1992-10-30 株式会社ユーシン精機 Conveyance path selection device for fluid conveyor

Similar Documents

Publication Publication Date Title
JPS5669864A (en) Thin-film transistor
JPS5519855A (en) Thin film condenser and manufacture thereof
GB2016803A (en) Thin film transistor construction and manufacturing method of the same
JPS5578532A (en) Formation of electrode for semiconductor device
JPS5772368A (en) Fusing type semiconductor device and its manufacture
JPS54154967A (en) Semiconductor electronic device
JPS54141585A (en) Semiconductor integrated circuit device
JPS54154966A (en) Semiconductor electron device
JPS6425452A (en) Semiconductor device
JPS55148422A (en) Manufacturing of semiconductor device
JPS5582459A (en) Transistor
JPS56101765A (en) Manufacture of semiconductor integrated circuit
JPS5320862A (en) Production of semiconductor device
JPS5297679A (en) Semiconductor rectifying element
JPS5680154A (en) Production of semiconductor device
JPS5376752A (en) Production of semionductor device
JPS56103473A (en) Semiconductor device
JPS5712546A (en) Semiconductor device and its manufacture
JPS5550653A (en) Resistance-capacity parallel connecting body
JPS5688352A (en) Manufacture of semiconductor integrated circuit
JPS55160455A (en) Manufacture of insulated gate type field effect semiconductor device
JPS5683946A (en) Manufacturing of semiconductor device
JPS5245289A (en) Method for fabrication of variable capacitance element
JPS57103347A (en) Manufacture of integrated circuit
JPS57206060A (en) Manufacturing method for semiconductor device