JPS5772368A - Fusing type semiconductor device and its manufacture - Google Patents

Fusing type semiconductor device and its manufacture

Info

Publication number
JPS5772368A
JPS5772368A JP14836180A JP14836180A JPS5772368A JP S5772368 A JPS5772368 A JP S5772368A JP 14836180 A JP14836180 A JP 14836180A JP 14836180 A JP14836180 A JP 14836180A JP S5772368 A JPS5772368 A JP S5772368A
Authority
JP
Japan
Prior art keywords
fuse
metallic silicide
manufacture
semiconductor device
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14836180A
Other languages
Japanese (ja)
Other versions
JPS5834947B2 (en
Inventor
Satoshi Shinozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55148361A priority Critical patent/JPS5834947B2/en
Publication of JPS5772368A publication Critical patent/JPS5772368A/en
Publication of JPS5834947B2 publication Critical patent/JPS5834947B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive

Landscapes

  • Read Only Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain a silicon fuse having the optimum resistance value by forming a metallic silicide layer to a main surface of the fuse in a fusing type PROM cell. CONSTITUTION:Metal is evaporated onto polycrystal silicon 32 with difference in a stage formed onto an insulating film 31, and annealed, thus shaping a metallic silicide 33. A fusing section 34 at the center of the metallic silicide 33 is thinly formed. Accordingly, resistance at the difference in the stage is increased, and the optimum resistance value can be obtaned as the whole fuse.
JP55148361A 1980-10-24 1980-10-24 Fuse blowing type semiconductor device and its manufacturing method Expired JPS5834947B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148361A JPS5834947B2 (en) 1980-10-24 1980-10-24 Fuse blowing type semiconductor device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148361A JPS5834947B2 (en) 1980-10-24 1980-10-24 Fuse blowing type semiconductor device and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS5772368A true JPS5772368A (en) 1982-05-06
JPS5834947B2 JPS5834947B2 (en) 1983-07-29

Family

ID=15451035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148361A Expired JPS5834947B2 (en) 1980-10-24 1980-10-24 Fuse blowing type semiconductor device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS5834947B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124741A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Semiconductor device
JPS60261154A (en) * 1984-06-08 1985-12-24 Hitachi Micro Comput Eng Ltd Semiconductor device
JPS62169348A (en) * 1986-01-21 1987-07-25 Nec Corp Semiconductor device
JPS6344757A (en) * 1986-04-11 1988-02-25 Nec Corp Semiconductor device
EP0857357A4 (en) * 1995-09-29 1999-03-17 Intel Corp AGGLOMERATED SILICIDE FUSE DEVICE
EP1122784A3 (en) * 2000-02-07 2002-08-14 Infineon Technologies North America Corp. Improved electrical fuses for semiconductor devices

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124741A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Semiconductor device
JPS60261154A (en) * 1984-06-08 1985-12-24 Hitachi Micro Comput Eng Ltd Semiconductor device
JPS62169348A (en) * 1986-01-21 1987-07-25 Nec Corp Semiconductor device
JPS6344757A (en) * 1986-04-11 1988-02-25 Nec Corp Semiconductor device
EP0857357A4 (en) * 1995-09-29 1999-03-17 Intel Corp AGGLOMERATED SILICIDE FUSE DEVICE
EP1122784A3 (en) * 2000-02-07 2002-08-14 Infineon Technologies North America Corp. Improved electrical fuses for semiconductor devices

Also Published As

Publication number Publication date
JPS5834947B2 (en) 1983-07-29

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