JPS5520219A - Vapor phase growing device for compound semiconductor - Google Patents

Vapor phase growing device for compound semiconductor

Info

Publication number
JPS5520219A
JPS5520219A JP9126878A JP9126878A JPS5520219A JP S5520219 A JPS5520219 A JP S5520219A JP 9126878 A JP9126878 A JP 9126878A JP 9126878 A JP9126878 A JP 9126878A JP S5520219 A JPS5520219 A JP S5520219A
Authority
JP
Japan
Prior art keywords
cpd
pipe
substrate
semiconductor
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9126878A
Other languages
Japanese (ja)
Other versions
JPS611396B2 (en
Inventor
Yoji Kato
Yoshifumi Mori
Kenji Morisane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP9126878A priority Critical patent/JPS5520219A/en
Publication of JPS5520219A publication Critical patent/JPS5520219A/en
Publication of JPS611396B2 publication Critical patent/JPS611396B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE: To obtain a vapor phase grown layer of a Cr-added high resistance cpd. semiconductor with stable desired characteristics in the title device by setting a Cr feed pipe separately from other gas feed pipes in the reaction tube placing a substrate for vapor phase growing a Cr-added cpd. semiconductor layer.
CONSTITUTION: One constituent material source 22 for a cpd. semiconductor material is placed at a high temp. part in reaction tube 20 provided with outer heating furnace 21, and substrate 1 for forming a Cr-added cpd. semiconductor layer is placed at a low temp. part. Pipe 24 for feeding other constituent material for the cpd. semiconductor and impurities feed pipe 25 are attached to the end of the side of source 22, Cr feed pipe 26 is set detachably and exchangeably on the opposite side, and pipe 26 is connected to pipe 28 leading to Cr cpd. storage tank 27 through connector 29. Cr feed hole 26a of pipe 26 is opened between source 22 and substrate 1 at the upper stream side of substrate 1 with respect to gas streams in tube 20.
COPYRIGHT: (C)1980,JPO&Japio
JP9126878A 1978-07-26 1978-07-26 Vapor phase growing device for compound semiconductor Granted JPS5520219A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9126878A JPS5520219A (en) 1978-07-26 1978-07-26 Vapor phase growing device for compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9126878A JPS5520219A (en) 1978-07-26 1978-07-26 Vapor phase growing device for compound semiconductor

Publications (2)

Publication Number Publication Date
JPS5520219A true JPS5520219A (en) 1980-02-13
JPS611396B2 JPS611396B2 (en) 1986-01-16

Family

ID=14021680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9126878A Granted JPS5520219A (en) 1978-07-26 1978-07-26 Vapor phase growing device for compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5520219A (en)

Also Published As

Publication number Publication date
JPS611396B2 (en) 1986-01-16

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