JPS6447018A - Vapor growth device - Google Patents

Vapor growth device

Info

Publication number
JPS6447018A
JPS6447018A JP20452787A JP20452787A JPS6447018A JP S6447018 A JPS6447018 A JP S6447018A JP 20452787 A JP20452787 A JP 20452787A JP 20452787 A JP20452787 A JP 20452787A JP S6447018 A JPS6447018 A JP S6447018A
Authority
JP
Japan
Prior art keywords
gas flow
nozzle
pores
flow guide
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20452787A
Other languages
Japanese (ja)
Other versions
JPH0693434B2 (en
Inventor
Fumitoshi Toyokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP20452787A priority Critical patent/JPH0693434B2/en
Publication of JPS6447018A publication Critical patent/JPS6447018A/en
Publication of JPH0693434B2 publication Critical patent/JPH0693434B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To improve the evenness in the distribution of a film formed on a semiconductor substrate as well as the distribution of electric characteristics by a method wherein a gas flow guide leading respective gas flow discharged from the pores of a nozzle to semiconductor substrates is provided. CONSTITUTION:A nozzle 5 to feed reactive gas is provided in an inner tube 3 of a reaction tube provided in a resistance heating furnace 1 while a gas flow guide 8 to evenly feed reactive gas fed from the nozzle 5 to an Si substrates 7 laminatedly held on a revolvable boat 6 is provided on the inner wall surface of the inner tube 3 opposite to the pores 5a of the nozzle 5. The bottom of V-type groove cut in the gas flow guide 8 aligned with the central line of reaction gas flow discharged from the pores 5a is provided on overall region of the opening pores 5a. The reactive gas fed to the reactive tube from the nozzle 5 is spread in sector through the intermediary of the gas flow guide 8 to be evenly fed to the Si substrates 7.
JP20452787A 1987-08-18 1987-08-18 Vapor phase growth equipment Expired - Lifetime JPH0693434B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20452787A JPH0693434B2 (en) 1987-08-18 1987-08-18 Vapor phase growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20452787A JPH0693434B2 (en) 1987-08-18 1987-08-18 Vapor phase growth equipment

Publications (2)

Publication Number Publication Date
JPS6447018A true JPS6447018A (en) 1989-02-21
JPH0693434B2 JPH0693434B2 (en) 1994-11-16

Family

ID=16492011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20452787A Expired - Lifetime JPH0693434B2 (en) 1987-08-18 1987-08-18 Vapor phase growth equipment

Country Status (1)

Country Link
JP (1) JPH0693434B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5753046A (en) * 1995-11-30 1998-05-19 Samsung Electronics Co., Ltd. Vertical diffusion furnace and cap therefor
JP2007250628A (en) * 2006-03-14 2007-09-27 Uv Craftory Co Ltd Chemical vapor deposition apparatus and gas flow path apparatus
CN107968038A (en) * 2017-11-20 2018-04-27 上海华力微电子有限公司 A kind of device of improvement HCD silicon nitride deposition process process defect situations
US10453735B2 (en) * 2017-09-26 2019-10-22 Kokusai Electric Corporation Substrate processing apparatus, reaction tube, semiconductor device manufacturing method, and recording medium
JP2019186335A (en) * 2018-04-06 2019-10-24 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
WO2024024544A1 (en) * 2022-07-28 2024-02-01 東京エレクトロン株式会社 Substrate processing device and substrate processing method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5753046A (en) * 1995-11-30 1998-05-19 Samsung Electronics Co., Ltd. Vertical diffusion furnace and cap therefor
JP2007250628A (en) * 2006-03-14 2007-09-27 Uv Craftory Co Ltd Chemical vapor deposition apparatus and gas flow path apparatus
US10453735B2 (en) * 2017-09-26 2019-10-22 Kokusai Electric Corporation Substrate processing apparatus, reaction tube, semiconductor device manufacturing method, and recording medium
CN107968038A (en) * 2017-11-20 2018-04-27 上海华力微电子有限公司 A kind of device of improvement HCD silicon nitride deposition process process defect situations
JP2019186335A (en) * 2018-04-06 2019-10-24 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
WO2024024544A1 (en) * 2022-07-28 2024-02-01 東京エレクトロン株式会社 Substrate processing device and substrate processing method

Also Published As

Publication number Publication date
JPH0693434B2 (en) 1994-11-16

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