JPS5520221A - Production of compound semiconductor single crystal body - Google Patents

Production of compound semiconductor single crystal body

Info

Publication number
JPS5520221A
JPS5520221A JP9141078A JP9141078A JPS5520221A JP S5520221 A JPS5520221 A JP S5520221A JP 9141078 A JP9141078 A JP 9141078A JP 9141078 A JP9141078 A JP 9141078A JP S5520221 A JPS5520221 A JP S5520221A
Authority
JP
Japan
Prior art keywords
semiconductor
crystal body
single crystal
specific gravity
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9141078A
Other languages
Japanese (ja)
Inventor
Masahiro Nakajima
Kiyoshi Hisatomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9141078A priority Critical patent/JPS5520221A/en
Publication of JPS5520221A publication Critical patent/JPS5520221A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To provide the title single crystal body with superior crystal characteristics by floating a heat insulator made of material with a specific gravity below that of a cpd. semiconductor and provided with a tubular part in close vicinity to the side of a seed crystal body to be pulled so that the body is surrounded with the part and by pulling the semiconductor from the inside of the tubular part of the insulator.
CONSTITUTION: Carbon crucible 3 internally installed with quartz crucible 2 is set in autoclave 1, and cpd. semiconductor 10 and seal member 20 with a specific gravity below that of semiconductor 10 are put into crucible 2 to melt semiconductor 10 with heater 4. On semiconductor 10 heat insulator 50 with a specific gravity below that of semiconductor 10 is floated. Insulator 50 consists of tubular body 50a surrounding seed crystal body 30 in close vicinity to the side of body 30 and flange part 50b. Semiconductor 10 is pulled with body 30 through seal member layer 20 in body 50a.
COPYRIGHT: (C)1980,JPO&Japio
JP9141078A 1978-07-28 1978-07-28 Production of compound semiconductor single crystal body Pending JPS5520221A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9141078A JPS5520221A (en) 1978-07-28 1978-07-28 Production of compound semiconductor single crystal body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9141078A JPS5520221A (en) 1978-07-28 1978-07-28 Production of compound semiconductor single crystal body

Publications (1)

Publication Number Publication Date
JPS5520221A true JPS5520221A (en) 1980-02-13

Family

ID=14025599

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9141078A Pending JPS5520221A (en) 1978-07-28 1978-07-28 Production of compound semiconductor single crystal body

Country Status (1)

Country Link
JP (1) JPS5520221A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5884199A (en) * 1981-11-11 1983-05-20 Nippon Telegr & Teleph Corp <Ntt> Growing apparatus for crystal with low dislocation density
JPS6036400A (en) * 1983-08-10 1985-02-25 Agency Of Ind Science & Technol Apparatus for producing compound semiconductor single crystal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5884199A (en) * 1981-11-11 1983-05-20 Nippon Telegr & Teleph Corp <Ntt> Growing apparatus for crystal with low dislocation density
JPS6036400A (en) * 1983-08-10 1985-02-25 Agency Of Ind Science & Technol Apparatus for producing compound semiconductor single crystal

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