JPS5521176A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5521176A JPS5521176A JP9495078A JP9495078A JPS5521176A JP S5521176 A JPS5521176 A JP S5521176A JP 9495078 A JP9495078 A JP 9495078A JP 9495078 A JP9495078 A JP 9495078A JP S5521176 A JPS5521176 A JP S5521176A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- heat generating
- impurity introduction
- introduction preventing
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000011521 glass Substances 0.000 abstract 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Landscapes
- Electronic Switches (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To prevent a heat generating resistor layer is deviated from a predetermined heat generating property by forming an impurity introduction preventing layer between a heat storing layer and heat generating resistor layer.
CONSTITUTION: An impurity introduction preventing layer 11 is interposed between a heat generating layer 2 and heat generating resistor layer 13 to prevent a phenomenon that the impurity contained in the heat generating layer 2 is introduced to the heat generating resistor layer 13. In this case, the impurity introduction preventing layer 11 is made up of the material having an electric insulation property, the heat generating layer 2 is made up, for example, of a grey glass for example, when the grey glass may be an alumina silicide acid glass with a heat-proof containing mainly SiO2 and Al2O3 and additionally 3% of CaO, 10% of K2O and 2% of Na2O, an impurity introduction preventing layer 11 is made up of SiO2 having a thickness of 2000Å by a spattering process and CVD process.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9495078A JPS5521176A (en) | 1978-08-02 | 1978-08-02 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9495078A JPS5521176A (en) | 1978-08-02 | 1978-08-02 | Semiconductor device |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58005556A Division JPS58201679A (en) | 1983-01-17 | 1983-01-17 | Thermal head |
| JP60202271A Division JPS61167571A (en) | 1985-09-12 | 1985-09-12 | Thermal head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5521176A true JPS5521176A (en) | 1980-02-15 |
| JPS6317630B2 JPS6317630B2 (en) | 1988-04-14 |
Family
ID=14124214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9495078A Granted JPS5521176A (en) | 1978-08-02 | 1978-08-02 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5521176A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58201679A (en) * | 1983-01-17 | 1983-11-24 | Tdk Corp | Thermal head |
| JPS5964457U (en) * | 1982-10-22 | 1984-04-27 | トヨタ自動車株式会社 | Exhaust gas purification device |
| JPS61167571A (en) * | 1985-09-12 | 1986-07-29 | Tdk Corp | Thermal head |
| JPH03124758U (en) * | 1990-03-30 | 1991-12-17 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51110969A (en) * | 1975-03-25 | 1976-09-30 | Mitsubishi Electric Corp | Handotaisochi |
-
1978
- 1978-08-02 JP JP9495078A patent/JPS5521176A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51110969A (en) * | 1975-03-25 | 1976-09-30 | Mitsubishi Electric Corp | Handotaisochi |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5964457U (en) * | 1982-10-22 | 1984-04-27 | トヨタ自動車株式会社 | Exhaust gas purification device |
| JPS58201679A (en) * | 1983-01-17 | 1983-11-24 | Tdk Corp | Thermal head |
| JPS61167571A (en) * | 1985-09-12 | 1986-07-29 | Tdk Corp | Thermal head |
| JPH03124758U (en) * | 1990-03-30 | 1991-12-17 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6317630B2 (en) | 1988-04-14 |
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