JPS5525857A - Memory circuit - Google Patents

Memory circuit

Info

Publication number
JPS5525857A
JPS5525857A JP9859878A JP9859878A JPS5525857A JP S5525857 A JPS5525857 A JP S5525857A JP 9859878 A JP9859878 A JP 9859878A JP 9859878 A JP9859878 A JP 9859878A JP S5525857 A JPS5525857 A JP S5525857A
Authority
JP
Japan
Prior art keywords
sensitivity
transistors
extremely
relatively
memory cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9859878A
Other languages
Japanese (ja)
Other versions
JPS6128199B2 (en
Inventor
Zensuke Matsuda
Shigeru Koshimaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9859878A priority Critical patent/JPS5525857A/en
Publication of JPS5525857A publication Critical patent/JPS5525857A/en
Publication of JPS6128199B2 publication Critical patent/JPS6128199B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To improve the sensitivity of a sense amplifier which amplifies an extremely-small signal through a memory cell by performing the best information detection over memory cells arranged at any position. CONSTITUTION:This circuit is provided with word lines WA and WB of relatively- high resistance and digit lines C, J and D of relatively-low resistance, and memory cells (m), (o) and (n) are provided at their intersections. Respective sense amplifiers, consisting of transistors F to H, F'' to H'', are driven by control signals (phi1) to (phi''1) applied to gates of transistors E1, Ei and En. Then, equalizing word lines WA and WB to control line (b) in delay allows each sense amplifier to activate an extremely-small signal, appearing on a corresponding line, at the highest sensitivity regardless of its distance from a word driver, so that its sensitivity can remarkably be improved.
JP9859878A 1978-08-11 1978-08-11 Memory circuit Granted JPS5525857A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9859878A JPS5525857A (en) 1978-08-11 1978-08-11 Memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9859878A JPS5525857A (en) 1978-08-11 1978-08-11 Memory circuit

Publications (2)

Publication Number Publication Date
JPS5525857A true JPS5525857A (en) 1980-02-23
JPS6128199B2 JPS6128199B2 (en) 1986-06-28

Family

ID=14224057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9859878A Granted JPS5525857A (en) 1978-08-11 1978-08-11 Memory circuit

Country Status (1)

Country Link
JP (1) JPS5525857A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826389A (en) * 1981-08-07 1983-02-16 Toshiba Corp Semiconductor memory
JPS595490A (en) * 1982-07-01 1984-01-12 Mitsubishi Electric Corp Semiconductor memory
JPS5922289A (en) * 1982-07-28 1984-02-04 Nec Corp Driving method of digit line
JPS5928295A (en) * 1982-08-06 1984-02-14 Nec Ic Microcomput Syst Ltd Integrated memory

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53984A (en) * 1976-06-25 1978-01-07 Agency Of Ind Science & Technol Integrated circuit element
JPS5387131A (en) * 1977-01-12 1978-08-01 Oki Electric Ind Co Ltd Memory circuit
JPS54139343A (en) * 1978-03-20 1979-10-29 Fujitsu Ltd Clock-system memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53984A (en) * 1976-06-25 1978-01-07 Agency Of Ind Science & Technol Integrated circuit element
JPS5387131A (en) * 1977-01-12 1978-08-01 Oki Electric Ind Co Ltd Memory circuit
JPS54139343A (en) * 1978-03-20 1979-10-29 Fujitsu Ltd Clock-system memory

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826389A (en) * 1981-08-07 1983-02-16 Toshiba Corp Semiconductor memory
JPS595490A (en) * 1982-07-01 1984-01-12 Mitsubishi Electric Corp Semiconductor memory
JPS5922289A (en) * 1982-07-28 1984-02-04 Nec Corp Driving method of digit line
JPS5928295A (en) * 1982-08-06 1984-02-14 Nec Ic Microcomput Syst Ltd Integrated memory

Also Published As

Publication number Publication date
JPS6128199B2 (en) 1986-06-28

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