JPS5526636A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5526636A JPS5526636A JP9903678A JP9903678A JPS5526636A JP S5526636 A JPS5526636 A JP S5526636A JP 9903678 A JP9903678 A JP 9903678A JP 9903678 A JP9903678 A JP 9903678A JP S5526636 A JPS5526636 A JP S5526636A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sio
- shaped slot
- opening
- covered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To prevent a short-circuit in a FET with a V-shaped slot by covering the surface of a section in which a source or drain electrode is opposed to a gate electrode with an insulator.
CONSTITUTION: A P layer 2 and an n+ layer 3 are formed on an n- layer on an n+ layer in accordance with a known method. An opening is given to a SiO2 film 8 to laminate a Mo 7 for selectively providing opentins. Further a Sio2 9 is laminated by a CVD process, an opening is selectively given and the side face of a layer 7 is covered with the SiO2 7. In this case, the distance ds between the opening end and layer 7 can be reduced to the level of margin for alignment. Subsequently, a V-shaped slot 4 is formed by an anisotropy etching, and the surface is covered with a SiO2 5. Thereafter, a gate electrode 6 is mounted by a normal process. According to such a construction, the V-shaped slot surface end, source region and drain electrode end are shortened to reduce the capacitance between the drain and source region can be reduced to permit a high-speed operation.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9903678A JPS5526636A (en) | 1978-08-16 | 1978-08-16 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9903678A JPS5526636A (en) | 1978-08-16 | 1978-08-16 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5526636A true JPS5526636A (en) | 1980-02-26 |
| JPS6248907B2 JPS6248907B2 (en) | 1987-10-16 |
Family
ID=14236179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9903678A Granted JPS5526636A (en) | 1978-08-16 | 1978-08-16 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5526636A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5293056A (en) * | 1991-06-17 | 1994-03-08 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with high off-breakdown-voltage and low on resistance |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7659427B2 (en) | 2021-03-31 | 2025-04-09 | キヤノン株式会社 | Image forming apparatus and image processing apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5310982A (en) * | 1976-07-19 | 1978-01-31 | Hitachi Ltd | Production of mis semiconductor device |
| JPS5492074A (en) * | 1977-12-29 | 1979-07-20 | Nippon Telegr & Teleph Corp <Ntt> | Mis field effect transistor and its manufacture |
-
1978
- 1978-08-16 JP JP9903678A patent/JPS5526636A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5310982A (en) * | 1976-07-19 | 1978-01-31 | Hitachi Ltd | Production of mis semiconductor device |
| JPS5492074A (en) * | 1977-12-29 | 1979-07-20 | Nippon Telegr & Teleph Corp <Ntt> | Mis field effect transistor and its manufacture |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5293056A (en) * | 1991-06-17 | 1994-03-08 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with high off-breakdown-voltage and low on resistance |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6248907B2 (en) | 1987-10-16 |
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