JPS5526637A - Manufacturing of semiconductor device - Google Patents

Manufacturing of semiconductor device

Info

Publication number
JPS5526637A
JPS5526637A JP9903778A JP9903778A JPS5526637A JP S5526637 A JPS5526637 A JP S5526637A JP 9903778 A JP9903778 A JP 9903778A JP 9903778 A JP9903778 A JP 9903778A JP S5526637 A JPS5526637 A JP S5526637A
Authority
JP
Japan
Prior art keywords
layer
shaped slot
sio
mask
positioning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9903778A
Other languages
Japanese (ja)
Inventor
Toshihiro Sekikawa
Yasuo Tarui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, Agency of Industrial Science and Technology filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP9903778A priority Critical patent/JPS5526637A/en
Publication of JPS5526637A publication Critical patent/JPS5526637A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To reduce a capacitance between a drain and source by positioning by a self-adjustment of a source electrode end and V-shaped slot end in a FET with a V-shaped slot.
CONSTITUTION: An n- layer and a p layer are superposed on an n+ layer. Then, an n+ layer is formed, and an SiO2 film is perforated. A poly Si's electrode layer 7 and SiO2 9 are laminated, and SiO2 11 is formed by oxidizing the poly Si 7 by utilizing a Si3N4 10 as a mask. Subsequently, an opening is formed under the mask 10 by an ion beam etching, leaving a SiO2 11, and a V-shaped slot 4 is formed by an anisotropy etching. Next, the mask 10 is removed to form a gate insulation film 5 and electrode 6. According to such a process, the surfacial opening end of the V-shaped slot and layer 7 end are determined by the opening end of the mask 10 relatively to each other. This positioning is performed by a one-time exposing process, and the distance between the opening end of the V-shaped slot surface and layer 7 end can be shortened regardless of a room for the positioning of the exposing, that is, equivalent to a thickness of the layer 5. Therefore, the capacitance between the drain and base can be reduced substantially to negligible level to permit a high speed operation.
COPYRIGHT: (C)1980,JPO&Japio
JP9903778A 1978-08-16 1978-08-16 Manufacturing of semiconductor device Pending JPS5526637A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9903778A JPS5526637A (en) 1978-08-16 1978-08-16 Manufacturing of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9903778A JPS5526637A (en) 1978-08-16 1978-08-16 Manufacturing of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5526637A true JPS5526637A (en) 1980-02-26

Family

ID=14236221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9903778A Pending JPS5526637A (en) 1978-08-16 1978-08-16 Manufacturing of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5526637A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56167378A (en) * 1980-05-28 1981-12-23 Asahi Chem Ind Co Ltd Electromagnetic converting element and manufacture thereof
US5204281A (en) * 1990-09-04 1993-04-20 Motorola, Inc. Method of making dynamic random access memory cell having a trench capacitor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5310982A (en) * 1976-07-19 1978-01-31 Hitachi Ltd Production of mis semiconductor device
JPS5363878A (en) * 1976-11-18 1978-06-07 Seiko Epson Corp Production of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5310982A (en) * 1976-07-19 1978-01-31 Hitachi Ltd Production of mis semiconductor device
JPS5363878A (en) * 1976-11-18 1978-06-07 Seiko Epson Corp Production of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56167378A (en) * 1980-05-28 1981-12-23 Asahi Chem Ind Co Ltd Electromagnetic converting element and manufacture thereof
US5204281A (en) * 1990-09-04 1993-04-20 Motorola, Inc. Method of making dynamic random access memory cell having a trench capacitor

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