JPS5526686A - Manufacturing semiconductor device - Google Patents
Manufacturing semiconductor deviceInfo
- Publication number
- JPS5526686A JPS5526686A JP10031478A JP10031478A JPS5526686A JP S5526686 A JPS5526686 A JP S5526686A JP 10031478 A JP10031478 A JP 10031478A JP 10031478 A JP10031478 A JP 10031478A JP S5526686 A JPS5526686 A JP S5526686A
- Authority
- JP
- Japan
- Prior art keywords
- solution
- etching
- prepared
- nitric acid
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000243 solution Substances 0.000 abstract 8
- 238000005530 etching Methods 0.000 abstract 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 4
- 229910017604 nitric acid Inorganic materials 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 1
- 239000011259 mixed solution Substances 0.000 abstract 1
- 230000008929 regeneration Effects 0.000 abstract 1
- 238000011069 regeneration method Methods 0.000 abstract 1
Landscapes
- Weting (AREA)
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To make a slope at the end of a metallic film and insulation film with a good regeneration capability by subjecting the metallic film and insulation film to two kinds of etching solutions containing phosphoric acid and acetic acid, prepared by varying the density of a nitric acid to be contained.
CONSTITUTION: A bonding or affinity between a photoresist and aluminum depends largely upon the density of a nitric acid added to an etching solution mainly containing a phosphoric acid. Two kinds of etching solution are prepared by using the above nature. Namely, an etching solution A is prepared by adding the nitric acid to 70 % concentration by 5 vol % to the mixed solution containing the phosphoric acid and acetic acid and etching solution B is prepared by adding the nitric acid of a doubled amount compared with the solution A. Subsequently, when an etching is provided for an aluminum wiring layer 3 provided on an insulation film 1 by utilizing a photoresist film 3 for a mask, initially an etching is performed up to an intermediate process utilizing the solution A. Thereafter, a full wahing is effected, and a slope is formed at the end of the wiring layer 2 by utilizing the solution B which tends to weaken the bonding between the photoresist and aluminum.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10031478A JPS5526686A (en) | 1978-08-16 | 1978-08-16 | Manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10031478A JPS5526686A (en) | 1978-08-16 | 1978-08-16 | Manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5526686A true JPS5526686A (en) | 1980-02-26 |
Family
ID=14270708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10031478A Pending JPS5526686A (en) | 1978-08-16 | 1978-08-16 | Manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5526686A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09298202A (en) * | 1996-04-30 | 1997-11-18 | Nec Corp | Method for forming wiring pattern |
| JPH09298201A (en) * | 1996-04-30 | 1997-11-18 | Nec Corp | Method for forming wiring pattern |
-
1978
- 1978-08-16 JP JP10031478A patent/JPS5526686A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09298202A (en) * | 1996-04-30 | 1997-11-18 | Nec Corp | Method for forming wiring pattern |
| JPH09298201A (en) * | 1996-04-30 | 1997-11-18 | Nec Corp | Method for forming wiring pattern |
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