JPS5673440A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5673440A JPS5673440A JP15002879A JP15002879A JPS5673440A JP S5673440 A JPS5673440 A JP S5673440A JP 15002879 A JP15002879 A JP 15002879A JP 15002879 A JP15002879 A JP 15002879A JP S5673440 A JPS5673440 A JP S5673440A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- film
- sio2
- mask
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
Landscapes
- Weting (AREA)
Abstract
PURPOSE:To obtain the smooth surface and to prevent the step disconnection on the coated film to be provided successively for the subject device by a method wherein a selective etching is performed on the eave of an SiO2 mask by changing the etching solution. CONSTITUTION:An etching is performed on the impurity-diffused layer 2 of an Si substrate 1 by a mixed solution of HF and HNO3 using an SiO2 mask and the protruding section of the mask 3' is formed. Then, when an etching is performed using a 10% HF aqueous solution, as the etching speed for the SiO2 is larger, a film 13 is formed with its protruding section having been removed considerably by the etching. Then, on the above film 13, an SiO2 23 is coated and its surface is turned into the smooth one. Therefore, even when a photo resist film is superposed on the film 23 in the following process, the surface is made uniform, there is no step disconnection and a device having excellent characteristics can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15002879A JPS5673440A (en) | 1979-11-21 | 1979-11-21 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15002879A JPS5673440A (en) | 1979-11-21 | 1979-11-21 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5673440A true JPS5673440A (en) | 1981-06-18 |
Family
ID=15487911
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15002879A Pending JPS5673440A (en) | 1979-11-21 | 1979-11-21 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5673440A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040004808A (en) * | 2002-07-05 | 2004-01-16 | 주식회사 하이닉스반도체 | Method of etching in a semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5285035A (en) * | 1976-01-09 | 1977-07-15 | Hitachi Ltd | Method of partially etching semiiconductors |
| JPS5315073A (en) * | 1976-07-28 | 1978-02-10 | Toshiba Corp | Production of semiconductor device |
| JPS5425167A (en) * | 1977-07-28 | 1979-02-24 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1979
- 1979-11-21 JP JP15002879A patent/JPS5673440A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5285035A (en) * | 1976-01-09 | 1977-07-15 | Hitachi Ltd | Method of partially etching semiiconductors |
| JPS5315073A (en) * | 1976-07-28 | 1978-02-10 | Toshiba Corp | Production of semiconductor device |
| JPS5425167A (en) * | 1977-07-28 | 1979-02-24 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040004808A (en) * | 2002-07-05 | 2004-01-16 | 주식회사 하이닉스반도체 | Method of etching in a semiconductor device |
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