JPS5527772A - Solid state pickup device - Google Patents

Solid state pickup device

Info

Publication number
JPS5527772A
JPS5527772A JP10109578A JP10109578A JPS5527772A JP S5527772 A JPS5527772 A JP S5527772A JP 10109578 A JP10109578 A JP 10109578A JP 10109578 A JP10109578 A JP 10109578A JP S5527772 A JPS5527772 A JP S5527772A
Authority
JP
Japan
Prior art keywords
electrode
substrate
along
region
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10109578A
Other languages
Japanese (ja)
Other versions
JPS6333353B2 (en
Inventor
Takao Chikamura
Kazufumi Ogawa
Yasuaki Terui
Shinji Fujiwara
Shoichi Fukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10109578A priority Critical patent/JPS5527772A/en
Publication of JPS5527772A publication Critical patent/JPS5527772A/en
Publication of JPS6333353B2 publication Critical patent/JPS6333353B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE: To eliminate the picture disturbance to the intensive light and thus to enable the picking- up by applying the DC bias voltage to the electrode on the photo conductor in order to give the functin to reduce the blooming phenomenon as well as the function to control the light sensitivity.
CONSTITUTION: The diode of n+-type region 11 is formed on n-type semiconductor substrate 10, and then p+-type region 12 is formed to secure the function of the potential barrier which blocks the electron injection from region 11 in the case of the CCD action, along with n+-type region 13 which functions as the potential well in the case of the BBD action. Furthermore, gate oxide film 16 functioning as the insulator film is formed on substrate 10 and between substrate 10 and 1st gate electrode 14 along with electrode 14 formed on substrate 10. At the same time, 1st electrode 17 of the diode connected electrically to region 11 is formed along with insulator layer 16 which give an electric isolation between electrode 17, substrate 10 and electrode 14 respectively. Then the positive potential is applied to transparent electrode 20 formed on the upper surface of photo conductor 19 from voltage source 21, and the output of the optical signal is detected by source 21. And the output signal is converted into the DC voltage and then fed back to source 21. Thus the blooming phenomenon can be reduced along with the control secured for the light sensitivity.
COPYRIGHT: (C)1980,JPO&Japio
JP10109578A 1978-08-18 1978-08-18 Solid state pickup device Granted JPS5527772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10109578A JPS5527772A (en) 1978-08-18 1978-08-18 Solid state pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10109578A JPS5527772A (en) 1978-08-18 1978-08-18 Solid state pickup device

Publications (2)

Publication Number Publication Date
JPS5527772A true JPS5527772A (en) 1980-02-28
JPS6333353B2 JPS6333353B2 (en) 1988-07-05

Family

ID=14291523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10109578A Granted JPS5527772A (en) 1978-08-18 1978-08-18 Solid state pickup device

Country Status (1)

Country Link
JP (1) JPS5527772A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55163881A (en) * 1979-06-08 1980-12-20 Hitachi Ltd Manufacture of light receiving surface
JPS5753182A (en) * 1980-09-17 1982-03-30 Fuji Photo Film Co Ltd Solid-state image pickup device
JPS58168274A (en) * 1982-03-29 1983-10-04 Matsushita Electric Ind Co Ltd Solid state image pickup device
JPS60210080A (en) * 1983-06-06 1985-10-22 Fuji Photo Film Co Ltd solid state imaging sensor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55163881A (en) * 1979-06-08 1980-12-20 Hitachi Ltd Manufacture of light receiving surface
JPS5753182A (en) * 1980-09-17 1982-03-30 Fuji Photo Film Co Ltd Solid-state image pickup device
JPS58168274A (en) * 1982-03-29 1983-10-04 Matsushita Electric Ind Co Ltd Solid state image pickup device
JPS60210080A (en) * 1983-06-06 1985-10-22 Fuji Photo Film Co Ltd solid state imaging sensor

Also Published As

Publication number Publication date
JPS6333353B2 (en) 1988-07-05

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