JPS6414958A - Solid-state image pickup element - Google Patents
Solid-state image pickup elementInfo
- Publication number
- JPS6414958A JPS6414958A JP62171499A JP17149987A JPS6414958A JP S6414958 A JPS6414958 A JP S6414958A JP 62171499 A JP62171499 A JP 62171499A JP 17149987 A JP17149987 A JP 17149987A JP S6414958 A JPS6414958 A JP S6414958A
- Authority
- JP
- Japan
- Prior art keywords
- impurity region
- region
- signal charge
- longer
- readout
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 abstract 7
- 238000005036 potential barrier Methods 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To prevent generation of potential barrier which prevents read operation of signal charge in the section where the conductive region becomes narrow in the side of readout electrode by allowing the signal readout electrode to become longer than the length corresponding to the depth of junction between the second region and first semiconductor layer and to protrude over the second region. CONSTITUTION:The part Y protruding over the impurity region 4 of photodiode of electrode 6 of signal charge readout means is set longer then the length X corresponding to the junction depth of such impurity region. Thereby, since the interval between the end of impurity layer 7 of reverse conductivity type formed on the photodiode surface and the end of impurity region 4 can be set wider than the width corresponding to thickness of such impurity region 4 in the ion implantation process using the signal charge readout electrode 6 as the mask, the width of such impurity region is no longer narrowed at the end of such impurity region. Therefore, the potential barrier which has prevented readout operation of signal charge, which has been a problem in an existing solid-state image pickup element using a buried photodiode as the photodetecting element is no longer generated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62171499A JP2723520B2 (en) | 1987-07-08 | 1987-07-08 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62171499A JP2723520B2 (en) | 1987-07-08 | 1987-07-08 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6414958A true JPS6414958A (en) | 1989-01-19 |
| JP2723520B2 JP2723520B2 (en) | 1998-03-09 |
Family
ID=15924232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62171499A Expired - Lifetime JP2723520B2 (en) | 1987-07-08 | 1987-07-08 | Solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2723520B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11233749A (en) * | 1997-11-14 | 1999-08-27 | Motorola Inc | Semiconductor image sensor and method thereof |
| JP2001044405A (en) * | 1999-06-28 | 2001-02-16 | Hyundai Electronics Ind Co Ltd | Image sensor and method of manufacturing the same |
| JP2005039219A (en) * | 2004-06-04 | 2005-02-10 | Canon Inc | Solid-state imaging device |
| US6878977B1 (en) | 1999-02-25 | 2005-04-12 | Canon Kabushiki Kaisha | Photoelectric conversion device, and image sensor and image input system making use of the same |
| JP2008252123A (en) * | 2008-06-18 | 2008-10-16 | Canon Inc | Solid-state imaging device |
| EP2287917A2 (en) | 1999-02-25 | 2011-02-23 | Canon Kabushiki Kaisha | Light-receiving element and photoelectric conversion device |
| US8138528B2 (en) | 1998-03-19 | 2012-03-20 | Canon Kabushiki Kaisha | Solid state image pickup device and manufacturing method therefor |
-
1987
- 1987-07-08 JP JP62171499A patent/JP2723520B2/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11233749A (en) * | 1997-11-14 | 1999-08-27 | Motorola Inc | Semiconductor image sensor and method thereof |
| JP2014060450A (en) * | 1997-11-14 | 2014-04-03 | Intellectual Ventures Second Llc | Semiconductor image sensor |
| US8138528B2 (en) | 1998-03-19 | 2012-03-20 | Canon Kabushiki Kaisha | Solid state image pickup device and manufacturing method therefor |
| US6878977B1 (en) | 1999-02-25 | 2005-04-12 | Canon Kabushiki Kaisha | Photoelectric conversion device, and image sensor and image input system making use of the same |
| EP2287917A2 (en) | 1999-02-25 | 2011-02-23 | Canon Kabushiki Kaisha | Light-receiving element and photoelectric conversion device |
| JP2001044405A (en) * | 1999-06-28 | 2001-02-16 | Hyundai Electronics Ind Co Ltd | Image sensor and method of manufacturing the same |
| JP2005039219A (en) * | 2004-06-04 | 2005-02-10 | Canon Inc | Solid-state imaging device |
| JP2008252123A (en) * | 2008-06-18 | 2008-10-16 | Canon Inc | Solid-state imaging device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2723520B2 (en) | 1998-03-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071128 Year of fee payment: 10 |