JPS5533020A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5533020A
JPS5533020A JP10477078A JP10477078A JPS5533020A JP S5533020 A JPS5533020 A JP S5533020A JP 10477078 A JP10477078 A JP 10477078A JP 10477078 A JP10477078 A JP 10477078A JP S5533020 A JPS5533020 A JP S5533020A
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacture
defects
planar
annealed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10477078A
Other languages
Japanese (ja)
Other versions
JPS6152976B2 (en
Inventor
Kouzou Yamagami
Takashi Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10477078A priority Critical patent/JPS5533020A/en
Publication of JPS5533020A publication Critical patent/JPS5533020A/en
Publication of JPS6152976B2 publication Critical patent/JPS6152976B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE: To prevent the characteristics of a planar semiconductor device from deteriorating due to surface potential, by annealing the semiconductor device at a temperauter of 250°C or less after irradiating the device with radiation in order to control the lifetime of the minority carriers of the device during its manufacture or after its completion.
CONSTITUTION: The planar semiconductor device is irradiated with radiation such as gamma rays in order to control the lifetime of the minority carriers of the device during its manufacture or after its completion. As a result, defects are produced in the crystal of the semiconductor device. If the device were annealed at a temperature of 300°C or more, the defects would be removed, namely, the effect of the defects would be eliminated. Therefore, the device is annealed at a temperature of 250°C or less in fact. This enables reducing the saturation current of a planar thyristor or the like without changing its turn-off time.
COPYRIGHT: (C)1980,JPO&Japio
JP10477078A 1978-08-28 1978-08-28 Manufacture of semiconductor device Granted JPS5533020A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10477078A JPS5533020A (en) 1978-08-28 1978-08-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10477078A JPS5533020A (en) 1978-08-28 1978-08-28 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5533020A true JPS5533020A (en) 1980-03-08
JPS6152976B2 JPS6152976B2 (en) 1986-11-15

Family

ID=14389702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10477078A Granted JPS5533020A (en) 1978-08-28 1978-08-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5533020A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421082A (en) * 1977-07-18 1979-02-16 Aloka Co Ltd Ultrasonic wave diagnosing probe
JPS59218726A (en) * 1983-05-26 1984-12-10 Mitsubishi Heavy Ind Ltd Method for processing semiconductor
JPH0472736A (en) * 1990-07-13 1992-03-06 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH0745167A (en) * 1993-07-28 1995-02-14 Sunx Ltd Detecting switch

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5321572A (en) * 1976-08-11 1978-02-28 Hitachi Ltd Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5321572A (en) * 1976-08-11 1978-02-28 Hitachi Ltd Production of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421082A (en) * 1977-07-18 1979-02-16 Aloka Co Ltd Ultrasonic wave diagnosing probe
JPS59218726A (en) * 1983-05-26 1984-12-10 Mitsubishi Heavy Ind Ltd Method for processing semiconductor
JPH0472736A (en) * 1990-07-13 1992-03-06 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH0745167A (en) * 1993-07-28 1995-02-14 Sunx Ltd Detecting switch

Also Published As

Publication number Publication date
JPS6152976B2 (en) 1986-11-15

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