JPS5533060A - Composite dry etching process - Google Patents

Composite dry etching process

Info

Publication number
JPS5533060A
JPS5533060A JP10539678A JP10539678A JPS5533060A JP S5533060 A JPS5533060 A JP S5533060A JP 10539678 A JP10539678 A JP 10539678A JP 10539678 A JP10539678 A JP 10539678A JP S5533060 A JPS5533060 A JP S5533060A
Authority
JP
Japan
Prior art keywords
etching
damaged layer
thermally
under
rate condition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10539678A
Other languages
Japanese (ja)
Other versions
JPS6349372B2 (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP10539678A priority Critical patent/JPS5533060A/en
Publication of JPS5533060A publication Critical patent/JPS5533060A/en
Publication of JPS6349372B2 publication Critical patent/JPS6349372B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To remove damaged layer caused by etching by altering etching parameter after etching with large etching rate condition or thermally treating it.
CONSTITUTION: When etching with low power after etching with high power under large etching rate condition, it can etch with less damaged layer for short time. Since the etching gas pressure relates to the production of damaged layer, the etching is conducted under high pressure after etching under predetermined gas pressure of predetermined gas, it can essentially remove the damaged layer chemically. It is also effective to thermally treat it after etching to arrange the disorder of atomic array in the vicinity of the surface. These etching step is continuously or stepwisely executed under different conditions, and thermally treated at higher than 530°C. to cause effective result.
COPYRIGHT: (C)1980,JPO&Japio
JP10539678A 1978-08-28 1978-08-28 Composite dry etching process Granted JPS5533060A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10539678A JPS5533060A (en) 1978-08-28 1978-08-28 Composite dry etching process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10539678A JPS5533060A (en) 1978-08-28 1978-08-28 Composite dry etching process

Publications (2)

Publication Number Publication Date
JPS5533060A true JPS5533060A (en) 1980-03-08
JPS6349372B2 JPS6349372B2 (en) 1988-10-04

Family

ID=14406466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10539678A Granted JPS5533060A (en) 1978-08-28 1978-08-28 Composite dry etching process

Country Status (1)

Country Link
JP (1) JPS5533060A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56158427A (en) * 1980-05-13 1981-12-07 Victor Co Of Japan Ltd Reactive ion etching
JPH01206620A (en) * 1988-02-15 1989-08-18 Toshiba Corp Manufacture of semiconductor device
JPH0276224A (en) * 1988-09-10 1990-03-15 Fujitsu Ltd Manufacture of compound semiconductor device
KR100565705B1 (en) * 1998-08-17 2006-05-25 엘지전자 주식회사 method for fabricating blue emitting device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52139373A (en) * 1976-05-17 1977-11-21 Hitachi Ltd Treating method for compound semiconductor
JPS52141443A (en) * 1976-05-21 1977-11-25 Nippon Electric Co Method of etching films

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52139373A (en) * 1976-05-17 1977-11-21 Hitachi Ltd Treating method for compound semiconductor
JPS52141443A (en) * 1976-05-21 1977-11-25 Nippon Electric Co Method of etching films

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56158427A (en) * 1980-05-13 1981-12-07 Victor Co Of Japan Ltd Reactive ion etching
JPH01206620A (en) * 1988-02-15 1989-08-18 Toshiba Corp Manufacture of semiconductor device
JPH0276224A (en) * 1988-09-10 1990-03-15 Fujitsu Ltd Manufacture of compound semiconductor device
KR100565705B1 (en) * 1998-08-17 2006-05-25 엘지전자 주식회사 method for fabricating blue emitting device

Also Published As

Publication number Publication date
JPS6349372B2 (en) 1988-10-04

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