JPS5534445A - Semiconductor luminous device - Google Patents

Semiconductor luminous device

Info

Publication number
JPS5534445A
JPS5534445A JP10676478A JP10676478A JPS5534445A JP S5534445 A JPS5534445 A JP S5534445A JP 10676478 A JP10676478 A JP 10676478A JP 10676478 A JP10676478 A JP 10676478A JP S5534445 A JPS5534445 A JP S5534445A
Authority
JP
Japan
Prior art keywords
layer
contact layer
type
growth
type inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10676478A
Other languages
Japanese (ja)
Inventor
Saburo Nakai
Takeshi Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10676478A priority Critical patent/JPS5534445A/en
Publication of JPS5534445A publication Critical patent/JPS5534445A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To obtain excellent ohmic contact in both electrodes, by each using a crystal containing p type impurities as a substrate and a crystal containing n type impurities as an electrode contact layer.
CONSTITUTION: A buffer layer 12 doubling as a p-type InP clad, an In1-XGaX As1-yPy active layer 13 and a n type InP clad layer 14 are successively laminating formed on a p type InP substrate 11, and a n type electrode contact layer 15 is made up on said layers. The contact layer 15 is built up in such a manner that In.Te (0.13%), for example, is used by mixing it in the ratio of lmg to In3g in a liquid phase epitaxial growth liquid consisting of an In.Ga.As.P solution, and the contact layer 15 with approximate 1μm thickness is obtained by the growth of 3°(Six minutes) at 648°C growth starting temperature and 0.5°C/minute cooling velocity.
COPYRIGHT: (C)1980,JPO&Japio
JP10676478A 1978-08-31 1978-08-31 Semiconductor luminous device Pending JPS5534445A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10676478A JPS5534445A (en) 1978-08-31 1978-08-31 Semiconductor luminous device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10676478A JPS5534445A (en) 1978-08-31 1978-08-31 Semiconductor luminous device

Publications (1)

Publication Number Publication Date
JPS5534445A true JPS5534445A (en) 1980-03-11

Family

ID=14441961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10676478A Pending JPS5534445A (en) 1978-08-31 1978-08-31 Semiconductor luminous device

Country Status (1)

Country Link
JP (1) JPS5534445A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57164592A (en) * 1981-04-01 1982-10-09 Nec Corp Semicondutor photo detector
US4933728A (en) * 1985-03-25 1990-06-12 Hitachi, Ltd. Semiconductor optical device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52127085A (en) * 1976-04-16 1977-10-25 Hitachi Ltd Semiconductor laser
JPS54114988A (en) * 1978-02-28 1979-09-07 Kokusai Denshin Denwa Co Ltd Semiconductor laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52127085A (en) * 1976-04-16 1977-10-25 Hitachi Ltd Semiconductor laser
JPS54114988A (en) * 1978-02-28 1979-09-07 Kokusai Denshin Denwa Co Ltd Semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57164592A (en) * 1981-04-01 1982-10-09 Nec Corp Semicondutor photo detector
US4933728A (en) * 1985-03-25 1990-06-12 Hitachi, Ltd. Semiconductor optical device

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