JPS5534450A - Method of applying bias magnetic field of magnetoresistance element - Google Patents

Method of applying bias magnetic field of magnetoresistance element

Info

Publication number
JPS5534450A
JPS5534450A JP10683378A JP10683378A JPS5534450A JP S5534450 A JPS5534450 A JP S5534450A JP 10683378 A JP10683378 A JP 10683378A JP 10683378 A JP10683378 A JP 10683378A JP S5534450 A JPS5534450 A JP S5534450A
Authority
JP
Japan
Prior art keywords
magnetic field
hard film
magnetic
bias magnetic
magnetoresistance element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10683378A
Other languages
Japanese (ja)
Other versions
JPS6034830B2 (en
Inventor
Tetsuo Muramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP53106833A priority Critical patent/JPS6034830B2/en
Publication of JPS5534450A publication Critical patent/JPS5534450A/en
Publication of JPS6034830B2 publication Critical patent/JPS6034830B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)

Abstract

PURPOSE: To obtain a hard film for forming bias magnetic fields with the optimum magnetic field strength, by controlling the strength of the applied magnetic fields of a hard film magnetizing process, in this magnetic resistance effect element that electric resistance value changes in response to the variation of magnetic fields.
CONSTITUTION: A magnetic field H is applied in the direction that has an angle of θ to the longitudinal direction and vertical direction of a hard film 3 of an element manufactured by making up the hard film 3 in Co-P, etc. on a substrate 2 and by successively building up an insulating layer 4 of SiO2 and a magnetic resistance element 5 on the film 3, the static characteristics of the magnetic resistance element 5 are measured and the hard film 3 with the optimum magnetic field strength is gained.
COPYRIGHT: (C)1980,JPO&Japio
JP53106833A 1978-08-30 1978-08-30 Method of applying bias magnetic field to magnetoresistive element Expired JPS6034830B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53106833A JPS6034830B2 (en) 1978-08-30 1978-08-30 Method of applying bias magnetic field to magnetoresistive element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53106833A JPS6034830B2 (en) 1978-08-30 1978-08-30 Method of applying bias magnetic field to magnetoresistive element

Publications (2)

Publication Number Publication Date
JPS5534450A true JPS5534450A (en) 1980-03-11
JPS6034830B2 JPS6034830B2 (en) 1985-08-10

Family

ID=14443728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53106833A Expired JPS6034830B2 (en) 1978-08-30 1978-08-30 Method of applying bias magnetic field to magnetoresistive element

Country Status (1)

Country Link
JP (1) JPS6034830B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5721883A (en) * 1980-07-14 1982-02-04 Sharp Corp Magnetic reluctance effect element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5721883A (en) * 1980-07-14 1982-02-04 Sharp Corp Magnetic reluctance effect element

Also Published As

Publication number Publication date
JPS6034830B2 (en) 1985-08-10

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