JPS5534471A - Mis-type semiconductor device - Google Patents
Mis-type semiconductor deviceInfo
- Publication number
- JPS5534471A JPS5534471A JP10751278A JP10751278A JPS5534471A JP S5534471 A JPS5534471 A JP S5534471A JP 10751278 A JP10751278 A JP 10751278A JP 10751278 A JP10751278 A JP 10751278A JP S5534471 A JPS5534471 A JP S5534471A
- Authority
- JP
- Japan
- Prior art keywords
- drain
- region
- bonding pad
- type
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000002950 deficient Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To reduce the defective rate of MIS-type semiconductor devices by equipping under a drain electrode bonding pad a second conduction-type region extending on a second conduction-type drain region.
CONSTITUTION: On an n-type semiconductor substrate 1 is provided a drain-well region 3 extending until a bonding pad region for drain electrodes and on the drain- well region is mounted a silicon oxide film 4 for field passivation served as a drain. Thereby conductive impurities of the same type as the drain are diffused on the surface of the semiconductor substrate 1 under the bonding pad region for the drain electrode 11, too and such structure is formed that the drain extends until the bonding pad regon. Though Leyden effect is caused just beneath the oxide film 4, the caused depth is under 5μ and stays within the drain region.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10751278A JPS5534471A (en) | 1978-09-04 | 1978-09-04 | Mis-type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10751278A JPS5534471A (en) | 1978-09-04 | 1978-09-04 | Mis-type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5534471A true JPS5534471A (en) | 1980-03-11 |
Family
ID=14461073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10751278A Pending JPS5534471A (en) | 1978-09-04 | 1978-09-04 | Mis-type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5534471A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5082267A (en) * | 1973-11-27 | 1975-07-03 | ||
| JPS5731864U (en) * | 1980-07-28 | 1982-02-19 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4968664A (en) * | 1972-11-06 | 1974-07-03 |
-
1978
- 1978-09-04 JP JP10751278A patent/JPS5534471A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4968664A (en) * | 1972-11-06 | 1974-07-03 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5082267A (en) * | 1973-11-27 | 1975-07-03 | ||
| JPS5731864U (en) * | 1980-07-28 | 1982-02-19 |
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