JPS553602A - Negative resistance device - Google Patents

Negative resistance device

Info

Publication number
JPS553602A
JPS553602A JP7411178A JP7411178A JPS553602A JP S553602 A JPS553602 A JP S553602A JP 7411178 A JP7411178 A JP 7411178A JP 7411178 A JP7411178 A JP 7411178A JP S553602 A JPS553602 A JP S553602A
Authority
JP
Japan
Prior art keywords
substrate
transistor
source
gate
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7411178A
Other languages
Japanese (ja)
Inventor
Tetsuya Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7411178A priority Critical patent/JPS553602A/en
Publication of JPS553602A publication Critical patent/JPS553602A/en
Priority to US06/254,117 priority patent/US4384300A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)

Abstract

PURPOSE: To reduce operating currents by utilizing substrate biasing effect that is obtanied through a source-to-source connection as well as a gate-to-gate connection of respective dual channel MOS transistors of N and P and also an interconnection between the drain of one transistor and the substrate of the other transistor.
CONSTITUTION: The device is composed of dual channel MOS transistors Q1 and Q2 of N and P having a shallow drain region D, and a source region S and a gate electrode G of one tsansistor is coupled to those of the other transistor, respectively. In addition, the drain region D of one of them is connected to the substrate of the other, and the drain regions D of the transistors Q1 and Q2 are connected to an input terminal K and an earthed output point A, respectively. In these configuration, both the Q1 and Q2 will be conducted when the potential at P is low, and then returned to its non-conductive state due to substrate bias effected when the potential becomes high. Therefore, the device can operate with a small current of the order ranging from mA. to μA.
COPYRIGHT: (C)1980,JPO&Japio
JP7411178A 1978-06-21 1978-06-21 Negative resistance device Pending JPS553602A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP7411178A JPS553602A (en) 1978-06-21 1978-06-21 Negative resistance device
US06/254,117 US4384300A (en) 1978-06-21 1981-04-14 Negative resistance device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7411178A JPS553602A (en) 1978-06-21 1978-06-21 Negative resistance device

Publications (1)

Publication Number Publication Date
JPS553602A true JPS553602A (en) 1980-01-11

Family

ID=13537752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7411178A Pending JPS553602A (en) 1978-06-21 1978-06-21 Negative resistance device

Country Status (1)

Country Link
JP (1) JPS553602A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4547790A (en) * 1980-05-20 1985-10-15 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device having contacting but electrically isolated regions of opposite conductivity types
JPH0730130A (en) * 1993-07-14 1995-01-31 Nec Corp Differentiated negative resistance diode and static memory
JPH07113510A (en) * 1993-10-19 1995-05-02 Fuji Kensetsu Kogyo Kk Cremating furnace

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4547790A (en) * 1980-05-20 1985-10-15 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device having contacting but electrically isolated regions of opposite conductivity types
JPH0730130A (en) * 1993-07-14 1995-01-31 Nec Corp Differentiated negative resistance diode and static memory
JPH07113510A (en) * 1993-10-19 1995-05-02 Fuji Kensetsu Kogyo Kk Cremating furnace

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