JPS553696A - Method of postttreating thin layer - Google Patents

Method of postttreating thin layer

Info

Publication number
JPS553696A
JPS553696A JP7216279A JP7216279A JPS553696A JP S553696 A JPS553696 A JP S553696A JP 7216279 A JP7216279 A JP 7216279A JP 7216279 A JP7216279 A JP 7216279A JP S553696 A JPS553696 A JP S553696A
Authority
JP
Japan
Prior art keywords
postttreating
thin layer
thin
layer
postttreating thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7216279A
Other languages
Japanese (ja)
Inventor
Kurinmeru Ebaaharuto
Maadaa Heruman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS553696A publication Critical patent/JPS553696A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0121—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Recrystallisation Techniques (AREA)
JP7216279A 1978-06-08 1979-06-08 Method of postttreating thin layer Pending JPS553696A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2825212A DE2825212C2 (en) 1978-06-08 1978-06-08 Process for the production of semiconductor components by means of a short, intense laser light pulse

Publications (1)

Publication Number Publication Date
JPS553696A true JPS553696A (en) 1980-01-11

Family

ID=6041372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7216279A Pending JPS553696A (en) 1978-06-08 1979-06-08 Method of postttreating thin layer

Country Status (2)

Country Link
JP (1) JPS553696A (en)
DE (1) DE2825212C2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2937993A1 (en) * 1979-09-20 1981-04-02 Siemens AG, 1000 Berlin und 8000 München Silicon gate forming system for MOS transistor - uses laser beam to melt insulating layer over gate to prevent breakdown
DE3032461A1 (en) * 1980-08-28 1982-04-01 Siemens AG, 1000 Berlin und 8000 München Alloyed metal contact prodn. on oriented semiconductor crystal - by rastering surface with intense pulsed laser light before applying metal assists alloying
US4359486A (en) 1980-08-28 1982-11-16 Siemens Aktiengesellschaft Method of producing alloyed metal contact layers on crystal-orientated semiconductor surfaces by energy pulse irradiation
DE3036260A1 (en) * 1980-09-26 1982-04-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt METHOD FOR PRODUCING ELECTRICAL CONTACTS ON A SILICON SOLAR CELL
US4448632A (en) * 1981-05-25 1984-05-15 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor devices

Also Published As

Publication number Publication date
DE2825212B1 (en) 1979-07-12
DE2825212C2 (en) 1980-03-27

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