JPS5538017A - Manufacturing of semiconductor memory device - Google Patents

Manufacturing of semiconductor memory device

Info

Publication number
JPS5538017A
JPS5538017A JP11050478A JP11050478A JPS5538017A JP S5538017 A JPS5538017 A JP S5538017A JP 11050478 A JP11050478 A JP 11050478A JP 11050478 A JP11050478 A JP 11050478A JP S5538017 A JPS5538017 A JP S5538017A
Authority
JP
Japan
Prior art keywords
film
silicon nitride
polysilicon layer
mask
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11050478A
Other languages
Japanese (ja)
Inventor
Kazunari Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11050478A priority Critical patent/JPS5538017A/en
Publication of JPS5538017A publication Critical patent/JPS5538017A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To form a silicon gate type MNOS memory with good integration efficiency by utilizing self-alignment method using a polysilicon layer as a mask. CONSTITUTION:F field oxidation film 2 on surface of a P-type Si base plate 1 is etched to uncover an element-forming region, and on this surface, a three-layer structure which is composed of a gate oxide film 3, a silicon nitride film 4 and a polysilicon layer 5 is formed by etching process using a photoresist mask 9. And, only the silicon nitride film 4 is side-etched to prepare a narrow-width silicon nitride film 4' and an entire surface of the Si base plate is oxidized to form an SiO2 film 10. And then, the SiO2 film 10, except its side, is removed. As ion is injected using the polysilicon layer 5 as a mask and respective regions of an n-type source 6 and a drain 7 are formed by self-alignment method.
JP11050478A 1978-09-08 1978-09-08 Manufacturing of semiconductor memory device Pending JPS5538017A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11050478A JPS5538017A (en) 1978-09-08 1978-09-08 Manufacturing of semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11050478A JPS5538017A (en) 1978-09-08 1978-09-08 Manufacturing of semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5538017A true JPS5538017A (en) 1980-03-17

Family

ID=14537437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11050478A Pending JPS5538017A (en) 1978-09-08 1978-09-08 Manufacturing of semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5538017A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58202576A (en) * 1982-05-21 1983-11-25 Nec Corp Insulated gate type field-effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58202576A (en) * 1982-05-21 1983-11-25 Nec Corp Insulated gate type field-effect transistor

Similar Documents

Publication Publication Date Title
GB1529296A (en) Self-aligned cmos process for insulating substrate device
GB1501249A (en) Field effect transistor
GB1354425A (en) Semiconductor device
JPS5575238A (en) Method of fabricating semiconductor device
JPS6315744B2 (en)
JPS5538019A (en) Manufacturing of semiconductor device
JPS5483778A (en) Mos semiconductor device and its manufacture
JPS5583267A (en) Method of fabricating semiconductor device
JPS57134956A (en) Manufacture of semiconductor integrated circuit
GB1318976A (en) Semi-conductor devices
JPS6447073A (en) Manufacture of semiconductor device
JPS6461928A (en) Manufacture of semiconductor device
JPS55153344A (en) Manufacture of semiconductor device
JPS5748248A (en) Manufacture of semiconductor device
JPS54154979A (en) Manufacture of insulated gate type semiconductor device
KR970054340A (en) Method of manufacturing transistor of semiconductor device
JPH01223741A (en) Semiconductor device and manufacture thereof
JPS566448A (en) Mos type integrated circuit device
JPS56158447A (en) Semiconductor integrated circuit and its manufacture
JPH02185068A (en) Manufacture of field-effect transistor
JPS5575234A (en) Semiconductor device
JPS5492070A (en) Mis field effect transistor and its manufacture
JPS5615080A (en) Mos type field effect transistor
JPS6425474A (en) Manufacture of mos type semiconductor device
JPS57155774A (en) Semiconductor device and manufacture thereof