JPS5538603A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5538603A
JPS5538603A JP10844178A JP10844178A JPS5538603A JP S5538603 A JPS5538603 A JP S5538603A JP 10844178 A JP10844178 A JP 10844178A JP 10844178 A JP10844178 A JP 10844178A JP S5538603 A JPS5538603 A JP S5538603A
Authority
JP
Japan
Prior art keywords
signal
delay
time
circuit
rise
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10844178A
Other languages
Japanese (ja)
Other versions
JPS5645226B2 (en
Inventor
Kazuo Hamasato
Atsushi Hirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10844178A priority Critical patent/JPS5538603A/en
Publication of JPS5538603A publication Critical patent/JPS5538603A/en
Publication of JPS5645226B2 publication Critical patent/JPS5645226B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 

Landscapes

  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To simplify greatly a peripheral timing unit by connecting holding circuits for an address input, data input and data output of a memory element array, and by providing a delay method for a clock signal. CONSTITUTION:On an arrival of clock signal 120 of ''1'', common holding timing signal 125 is generated with time delay of delay circuit 111 and timing signal 126 is also generated by delay circuit 112 with further time delay. Input data 121, address input 123 and write signal 124 are held by holding circuits 106-108 at a point in time of a rise of signal 125. Write control signal generating circuit 110, on the other hand, is reset in a rise of signal 120 and set in a rise of signal 126 to generate output 127. At the output of AND circuit 113, write control signal of memory element array 101 appears. Here, signal 105 is inputted being delayed by a difference in delay time between circuits 112 and 111 by input data 103 and address input signal 102. Further, signal 105 falls leading by the delay time of circuit 11 before a point in time when inputs 103 and 102 changes at next time.
JP10844178A 1978-09-04 1978-09-04 Semiconductor memory device Granted JPS5538603A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10844178A JPS5538603A (en) 1978-09-04 1978-09-04 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10844178A JPS5538603A (en) 1978-09-04 1978-09-04 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5538603A true JPS5538603A (en) 1980-03-18
JPS5645226B2 JPS5645226B2 (en) 1981-10-24

Family

ID=14484844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10844178A Granted JPS5538603A (en) 1978-09-04 1978-09-04 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5538603A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4337523A (en) * 1979-08-29 1982-06-29 Hitachi, Ltd. Bipolar memory circuit
JPS58122687A (en) * 1982-01-14 1983-07-21 Nec Corp Semiconductor storage device
US4445204A (en) * 1980-10-03 1984-04-24 Nippon Electric Co., Ltd. Memory device
JPS59124075A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Semiconductor storage device
JPS59124089A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Semiconductor storage circuit
JPS6070592A (en) * 1983-09-28 1985-04-22 Fujitsu Ltd Writing circuit of memory
JPS60103576A (en) * 1983-11-09 1985-06-07 Toshiba Corp Data write controller of random access memory
JPS61148692A (en) * 1984-12-24 1986-07-07 Nippon Telegr & Teleph Corp <Ntt> Memory device
US4608669A (en) * 1984-05-18 1986-08-26 International Business Machines Corporation Self contained array timing
US4825416A (en) * 1986-05-07 1989-04-25 Advanced Micro Devices, Inc. Integrated electronic memory circuit with internal timing and operable in both latch-based and register-based systems
JPH01133288A (en) * 1987-11-18 1989-05-25 Sony Corp Memory
JPH01273288A (en) * 1988-04-25 1989-11-01 Nec Corp Random access memory device
JPH01287895A (en) * 1988-05-16 1989-11-20 Toshiba Corp Semiconductor memory
JPH0289294A (en) * 1988-09-27 1990-03-29 Nec Corp Semiconductor integration circuit
USRE33213E (en) * 1985-12-10 1990-05-08 High Yield Technology Light scattering particle detector for wafer processing equipment
US4935902A (en) * 1987-08-31 1990-06-19 Sharp Kabushiki Kaisha Sequential access memory

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4337523A (en) * 1979-08-29 1982-06-29 Hitachi, Ltd. Bipolar memory circuit
US4445204A (en) * 1980-10-03 1984-04-24 Nippon Electric Co., Ltd. Memory device
JPS58122687A (en) * 1982-01-14 1983-07-21 Nec Corp Semiconductor storage device
JPS59124075A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Semiconductor storage device
JPS59124089A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Semiconductor storage circuit
JPS6070592A (en) * 1983-09-28 1985-04-22 Fujitsu Ltd Writing circuit of memory
JPS60103576A (en) * 1983-11-09 1985-06-07 Toshiba Corp Data write controller of random access memory
US4608669A (en) * 1984-05-18 1986-08-26 International Business Machines Corporation Self contained array timing
JPS61148692A (en) * 1984-12-24 1986-07-07 Nippon Telegr & Teleph Corp <Ntt> Memory device
USRE33213E (en) * 1985-12-10 1990-05-08 High Yield Technology Light scattering particle detector for wafer processing equipment
US4825416A (en) * 1986-05-07 1989-04-25 Advanced Micro Devices, Inc. Integrated electronic memory circuit with internal timing and operable in both latch-based and register-based systems
US4935902A (en) * 1987-08-31 1990-06-19 Sharp Kabushiki Kaisha Sequential access memory
JPH01133288A (en) * 1987-11-18 1989-05-25 Sony Corp Memory
JPH01273288A (en) * 1988-04-25 1989-11-01 Nec Corp Random access memory device
JPH01287895A (en) * 1988-05-16 1989-11-20 Toshiba Corp Semiconductor memory
JPH0289294A (en) * 1988-09-27 1990-03-29 Nec Corp Semiconductor integration circuit

Also Published As

Publication number Publication date
JPS5645226B2 (en) 1981-10-24

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