JPS5539643A - Semiconductor light receiver-emitter - Google Patents

Semiconductor light receiver-emitter

Info

Publication number
JPS5539643A
JPS5539643A JP11277478A JP11277478A JPS5539643A JP S5539643 A JPS5539643 A JP S5539643A JP 11277478 A JP11277478 A JP 11277478A JP 11277478 A JP11277478 A JP 11277478A JP S5539643 A JPS5539643 A JP S5539643A
Authority
JP
Japan
Prior art keywords
light
layer
type inp
current
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11277478A
Other languages
Japanese (ja)
Inventor
Kentarou Onabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11277478A priority Critical patent/JPS5539643A/en
Publication of JPS5539643A publication Critical patent/JPS5539643A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires

Landscapes

  • Led Devices (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE: To place a p- or n-type In1-xGasAsyP1-y on an n-type InP substrate and further a p,n,p,-type InP thereon for high-brightness light emission.
CONSTITUTION: If and ELD of this construction is biassed regularly and light 28 with a wavelength of about 0.8μm is applied on the surface 30 of a p-type InP layer 25, said light passes through an emitter layer 25 and is absorbed when having reached an n-type InP base layer 24 to make an electronic hole couple. A minority carrier diffuses onto a p-type InP corrector layer 23 due to concentration differential and generates corrector current. The photocurrent generated at a base layer at this time requires the supply of said minority carrier from emitter layer. Therefore, the corrector current amplified to 1/(1-α) wherein α is base earthing current amplification factor is generated. Light with a wavelength equivalent to the energy gap of light-emitting layer In1-xGaxAsyP1-y 22 is generated by said current. Said light is passed through a transparent substrate 21 and light 29 is taken out through surface 31. Crystal mixation ratios x and y are selected depending on wavelength of light emission, and the grids of said light emitting layer In1-xGaxAsyP1-y 22 and substrate 21 are matched with each other. Thereby, light is emitted with high brightness.
COPYRIGHT: (C)1980,JPO&Japio
JP11277478A 1978-09-12 1978-09-12 Semiconductor light receiver-emitter Pending JPS5539643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11277478A JPS5539643A (en) 1978-09-12 1978-09-12 Semiconductor light receiver-emitter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11277478A JPS5539643A (en) 1978-09-12 1978-09-12 Semiconductor light receiver-emitter

Publications (1)

Publication Number Publication Date
JPS5539643A true JPS5539643A (en) 1980-03-19

Family

ID=14595161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11277478A Pending JPS5539643A (en) 1978-09-12 1978-09-12 Semiconductor light receiver-emitter

Country Status (1)

Country Link
JP (1) JPS5539643A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4614958A (en) * 1981-02-23 1986-09-30 Omron Tateisi Electronics Co. Light emitting and receiving device
US5343054A (en) * 1992-09-14 1994-08-30 Kabushiki Kaisha Toshiba Semiconductor light-detection device with recombination rates

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4924086A (en) * 1972-06-26 1974-03-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4924086A (en) * 1972-06-26 1974-03-04

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4614958A (en) * 1981-02-23 1986-09-30 Omron Tateisi Electronics Co. Light emitting and receiving device
US5343054A (en) * 1992-09-14 1994-08-30 Kabushiki Kaisha Toshiba Semiconductor light-detection device with recombination rates

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