JPS5541709A - Sos semiconductor base - Google Patents

Sos semiconductor base

Info

Publication number
JPS5541709A
JPS5541709A JP11385278A JP11385278A JPS5541709A JP S5541709 A JPS5541709 A JP S5541709A JP 11385278 A JP11385278 A JP 11385278A JP 11385278 A JP11385278 A JP 11385278A JP S5541709 A JPS5541709 A JP S5541709A
Authority
JP
Japan
Prior art keywords
layer
sapphire
base
semiconductor base
polycrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11385278A
Other languages
Japanese (ja)
Inventor
Yoshio Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP11385278A priority Critical patent/JPS5541709A/en
Publication of JPS5541709A publication Critical patent/JPS5541709A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE: To protect the quality inferiority of heated sapphire by annealling the polycrystal Si-layer with argon laser, after the Si-layer is grown on the sapphire base at low temperature.
CONSTITUTION: After the polycrystal Si-layer 4 was grown on the sapphire base 3 at relatively low temperature of 600W700°C, the layer is annealled under a given condition with argon laser. Then, the Si-layer 4 is converted to a single crystal Si-layer 5 and a well crystalized SOS semiconductor base is obtained. By so doing, it is possible to protect the quality interiority caused by distortion etc. due to different thermal expansibility between sapphire and Si when the base 3 is heated up.
COPYRIGHT: (C)1980,JPO&Japio
JP11385278A 1978-09-16 1978-09-16 Sos semiconductor base Pending JPS5541709A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11385278A JPS5541709A (en) 1978-09-16 1978-09-16 Sos semiconductor base

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11385278A JPS5541709A (en) 1978-09-16 1978-09-16 Sos semiconductor base

Publications (1)

Publication Number Publication Date
JPS5541709A true JPS5541709A (en) 1980-03-24

Family

ID=14622674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11385278A Pending JPS5541709A (en) 1978-09-16 1978-09-16 Sos semiconductor base

Country Status (1)

Country Link
JP (1) JPS5541709A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577924A (en) * 1980-06-18 1982-01-16 Hitachi Ltd Semiconductor device and manufacture thereof
JPS5922318A (en) * 1982-07-29 1984-02-04 Nec Corp Forming of single crystal semiconductor layer
JPS5975619A (en) * 1982-10-25 1984-04-28 Agency Of Ind Science & Technol Manufacture of semiconductor circuit element
JPS59119822A (en) * 1982-12-27 1984-07-11 Fujitsu Ltd Manufacture of semiconductor device
JPS60202952A (en) * 1984-03-28 1985-10-14 Fujitsu Ltd Manufacture of semiconductor device
US5402749A (en) * 1994-05-03 1995-04-04 The United States Of America As Represented By The Secretary Of The Navy Ultra-high vacuum/chemical vapor deposition of epitaxial silicon-on-sapphire
US5877094A (en) * 1994-04-07 1999-03-02 International Business Machines Corporation Method for fabricating a silicon-on-sapphire wafer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPL. PHYS. LETT.=1978 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577924A (en) * 1980-06-18 1982-01-16 Hitachi Ltd Semiconductor device and manufacture thereof
JPS5922318A (en) * 1982-07-29 1984-02-04 Nec Corp Forming of single crystal semiconductor layer
JPS5975619A (en) * 1982-10-25 1984-04-28 Agency Of Ind Science & Technol Manufacture of semiconductor circuit element
JPS59119822A (en) * 1982-12-27 1984-07-11 Fujitsu Ltd Manufacture of semiconductor device
JPS60202952A (en) * 1984-03-28 1985-10-14 Fujitsu Ltd Manufacture of semiconductor device
US5877094A (en) * 1994-04-07 1999-03-02 International Business Machines Corporation Method for fabricating a silicon-on-sapphire wafer
US6238935B1 (en) 1994-04-07 2001-05-29 International Business Machines Corporation Silicon-on-insulator wafer having conductive layer for detection with electrical sensors
US5402749A (en) * 1994-05-03 1995-04-04 The United States Of America As Represented By The Secretary Of The Navy Ultra-high vacuum/chemical vapor deposition of epitaxial silicon-on-sapphire

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