JPS5541738A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5541738A
JPS5541738A JP11462778A JP11462778A JPS5541738A JP S5541738 A JPS5541738 A JP S5541738A JP 11462778 A JP11462778 A JP 11462778A JP 11462778 A JP11462778 A JP 11462778A JP S5541738 A JPS5541738 A JP S5541738A
Authority
JP
Japan
Prior art keywords
film
substrate
regions
type
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11462778A
Other languages
Japanese (ja)
Other versions
JPS5933271B2 (en
Inventor
Hideo Sunami
Takao Miyazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
NTT Inc
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP53114627A priority Critical patent/JPS5933271B2/en
Publication of JPS5541738A publication Critical patent/JPS5541738A/en
Publication of JPS5933271B2 publication Critical patent/JPS5933271B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: To provide a new semiconductor device having a minimum connected area of an electrode set in the emitter region of an MOSTr by forming impurities diffused regions having a mask of an insulation film within a semiconductor substrate, subjecting the impurities diffused regions to heat treatment to link together and form a base region, and providing the emitter region in the base region.
CONSTITUTION: An SiO2 film 2 is laid on and adhered to a p-type silicon substrate 1 and a mask consisting of an Si3N4 film 3 and a second SiO2 film 4 is provided in the middle of the surface of the film 2. This composite is subjected to heat treatment in a wet oxygen atmosphere to form a thick field SiO2 film 5 in the substrate 1 as well as in the place of the exposed areas of the film 2, and then to side etching of the films 3 and 2 to expose the substrate 1 at the inward ends of the film 5. The film 4 is removed and, instead, a multicrystalline silicon film 6 containing n-type impurities is formed by accumulation, followed by heat treatment to diffuse the impurities and form a pair of n-type regions 7 within the substrate 1. The films 3 and 2 as well as the film 6 remaining above between the regions 7 are then removed, and the resulting composite is subjected to heat treatment to link the paired regions 7 and form an n-type base region. Thereupon, a p-type emitter region 10 is diffused and formed in the base region, followed by setting of an electrode 9.
COPYRIGHT: (C)1980,JPO&Japio
JP53114627A 1978-09-20 1978-09-20 Manufacturing method of semiconductor device Expired JPS5933271B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53114627A JPS5933271B2 (en) 1978-09-20 1978-09-20 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53114627A JPS5933271B2 (en) 1978-09-20 1978-09-20 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5541738A true JPS5541738A (en) 1980-03-24
JPS5933271B2 JPS5933271B2 (en) 1984-08-14

Family

ID=14642573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53114627A Expired JPS5933271B2 (en) 1978-09-20 1978-09-20 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5933271B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5673462A (en) * 1979-11-20 1981-06-18 Fujitsu Ltd Manufacture of semiconductor device
JPS57181157A (en) * 1981-05-01 1982-11-08 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPS5878425A (en) * 1981-11-04 1983-05-12 Nippon Telegr & Teleph Corp <Ntt> Preparation of semiconductor device
JPS62216270A (en) * 1986-05-15 1987-09-22 Nec Corp Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5673462A (en) * 1979-11-20 1981-06-18 Fujitsu Ltd Manufacture of semiconductor device
JPS57181157A (en) * 1981-05-01 1982-11-08 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPS5878425A (en) * 1981-11-04 1983-05-12 Nippon Telegr & Teleph Corp <Ntt> Preparation of semiconductor device
JPS62216270A (en) * 1986-05-15 1987-09-22 Nec Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5933271B2 (en) 1984-08-14

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