JPS5550629A - Manufacture of mesa-type semiconductor device - Google Patents
Manufacture of mesa-type semiconductor deviceInfo
- Publication number
- JPS5550629A JPS5550629A JP12384078A JP12384078A JPS5550629A JP S5550629 A JPS5550629 A JP S5550629A JP 12384078 A JP12384078 A JP 12384078A JP 12384078 A JP12384078 A JP 12384078A JP S5550629 A JPS5550629 A JP S5550629A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- glass films
- mask
- film
- mesa
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000011521 glass Substances 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000001962 electrophoresis Methods 0.000 abstract 1
- 238000005286 illumination Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To accomplish highly accurate opening of holes and forming of electrodes by preventing the swell of a glass film over an insnlating film of a substrate in forming the glass films on the mesa grooves of the substrate by the eletro-cataphoresis method.
CONSTITUTION: A p-layer 7 is placed on an n-type Si substrate 1 and an n-layer 8 is formed. Thus, a pn junction which is practically in parallel with the main surface of the substrate is constituted. Then, electrode openings are made through an SiO2 film 9 that covers the substrate 1, and mesa grooves 11 are provided by a resist mask 10. Furthermore, glass films 12 are formed on the mesa grooves by the electrocataphoresis method without removing the mask 10. After the treatment of several minutes at about 900°C and sintering of the glass films, portions of the glass films shrink and retreat to the portion of the glass films that are located inside the mesa grooves, as the mask 10 is burned and disappeared. Since rise-up of the glass films over the film 9 is very small, poor contact of an electrode-forming resist mask and poor contact of a light illumination mask are eliminated, thereby the openigs for electrodes 13 and 14 are formed quite accurately.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12384078A JPS5550629A (en) | 1978-10-06 | 1978-10-06 | Manufacture of mesa-type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12384078A JPS5550629A (en) | 1978-10-06 | 1978-10-06 | Manufacture of mesa-type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5550629A true JPS5550629A (en) | 1980-04-12 |
Family
ID=14870677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12384078A Pending JPS5550629A (en) | 1978-10-06 | 1978-10-06 | Manufacture of mesa-type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5550629A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4681667A (en) * | 1982-12-22 | 1987-07-21 | Nec Corporation | Method of producing electrostrictive effect element |
| JPS6476220A (en) * | 1987-09-17 | 1989-03-22 | Ibm | Bit mask generation circuit |
-
1978
- 1978-10-06 JP JP12384078A patent/JPS5550629A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4681667A (en) * | 1982-12-22 | 1987-07-21 | Nec Corporation | Method of producing electrostrictive effect element |
| JPS6476220A (en) * | 1987-09-17 | 1989-03-22 | Ibm | Bit mask generation circuit |
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